TITLE

New nondestructive method for the investigation of insulator-semiconductor structures

AUTHOR(S)
Bouillier, G.; Alquie, C.; Dreyfus, G.
PUB. DATE
September 1985
SOURCE
Applied Physics Letters;9/1/1985, Vol. 47 Issue 5, p506
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The pressure wave propagation (PWP) method, originally designed to study the electrical properties of polymers, is used to determine the distribution of charges in metal-insulator-silicon and metal-oxide-silicon structures. This method is nondestructive and fast. The electric field distribution in a sample is derived from the signal induced by the propagation of a pressure wave with a short rise time in the structure. As a new application of this method, we demonstrate that it is possible to observe the evolution of the surface states of silicon during ambient oxidation and to reveal the charge distribution in a metal-glass-silicon structure.
ACCESSION #
9818087

 

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