TITLE

Effect of oxygen on In0.53Ga0.47As films grown by molecular beam epitaxy

AUTHOR(S)
Stall, R. A.; Wunder, R. J.; Swaminathan, V.; Cox, H. M.
PUB. DATE
September 1985
SOURCE
Applied Physics Letters;9/1/1985, Vol. 47 Issue 5, p518
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Incomplete removal of the native oxide from the surface of the InP substrate before growth leads to oxygen incorporation in subsequently grown molecular beam epitaxial In0.53Ga0.47As films. Secondary ion mass spectroscopy profiles indicate highest concentrations near the InP substrate and the InGaAs surface with lower levels in the middle of the epilayer on samples which show oxygen contamination. Electrically such films have low electron mobilities (μ300 K<3000 cm2/V s) and high net free-carrier densities (1016 cm-3
ACCESSION #
9818080

 

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