TITLE

Metal-oxide-semiconductor field-effect transistors fabricated using self-aligned silicide technology

AUTHOR(S)
Tsaur, B-Y.; Anderson, C. H.
PUB. DATE
September 1985
SOURCE
Applied Physics Letters;9/1/1985, Vol. 47 Issue 5, p527
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
N- and p-channel metal-oxide-semiconductor field-effect transistors have been fabricated with self-aligned WSi2 source, WSi2 drain, and WSi2/polycrystalline-silicon gate. Ion beam mixing and rapid thermal annealing techniques were employed to form smooth WSi2 films selectively on the device area and to simultaneously form shallow source and drain p-n junctions. Good electrical characteristics were obtained for both n- and p-channel devices, which have a gate length of 1.5 μm.
ACCESSION #
9818076

 

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