Oxygen in titanium nitride diffusion barriers

Sinke, W.; Frijlink, G. P. A.; Saris, F. W.
September 1985
Applied Physics Letters;9/1/1985, Vol. 47 Issue 5, p471
Academic Journal
Oxygen has been found to play a dominant role in TiN barrier performance between Si(100) and Al. When TiN is exposed to air prior to Al deposition, interdiffusion of the Si/TiN/Al structure is not observed until heating to a temperature of 560 °C, whereas the barrier fails already below 400 °C when Al is deposited in situ onto TiN.


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