Velocity dependence of maximum substitutional concentrations of In and Bi trapped in rapidly solidified Si

Campisano, S. U.; Poate, J. M.
September 1985
Applied Physics Letters;9/1/1985, Vol. 47 Issue 5, p485
Academic Journal
The maximum substitutional concentrations of In and Bi that can be trapped in (100) Si by rapid solidification have been measured by Rutherford backscattering and channeling techniques. The In and Bi were implanted in surface layers of Si which were melted by pulsed ruby laser irradiation. The concentration measurements over a liquid-solid interface velocity range of 1–6 m/s have been compared with calculations from morphological stability theory which give the concentrations present at the onset of interface instability.


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