Secondary implantation of Sb into Si molecular beam epitaxy layers

Jorke, H.; Herzog, H.-J.; Kibbel, H.
September 1985
Applied Physics Letters;9/1/1985, Vol. 47 Issue 5, p511
Academic Journal
We report on the influence of low-energy Si+ ions on the incorporation of Sb adatoms existing on growing (100) Si molecular beam epitaxy layers. At a growth temperature of 650 °C employed for these experiments an increase of incorporation of about three orders of magnitude compared to the spontaneous incorporation is obtained at ion flux densities of typically 1012 cm-2 s-1. Dopant activation coefficients of almost unity are established up to 1019 cm-3. The number of incorporated adatoms is found to increase proportionally with preadjusted adatom density as well as with Si+ ion dose. At an ion energy of 500 eV the constant of proportionality is estimated to be σI =(5±2)×10-16 cm2.


Related Articles

  • Effect of residual ion damage on the minority carrier lifetime in molecular beam epitaxy grown.... Peters, C.J.; Noel, J.P. // Applied Physics Letters;8/14/1995, Vol. 67 Issue 7, p977 

    Examines the effect of residual ion damage on the minority carrier lifetime in molecular beam epitaxy grown silicon doped by low-energy ion implantation. Measurement of the minority carrier lifetime; Development of three samples at temperatures of 500, 650, and 800 degree Celsius; Equality in...

  • Observation of deep levels in undoped GaSb grown by molecular beam epitaxy. Kuramochi, Eiichi; Kondo, Naoto // Applied Physics Letters;11/8/1993, Vol. 63 Issue 19, p2664 

    Examines the deep levels of undoped gallium antimonide (GaSb) grown by molecular beam epitaxy using deep level transient spectroscopy method. Detection of hole traps in the undoped GaSb; Implication of the depth profile of trap concentration for the trap origin; Measurement of the capture cross...

  • Ultrahigh vacuum in situ transmission electron microscopy observations of molecular-beam epitaxially grown InSb(111). Yata, M.; Toda, A.; Nagatsuyu, H.; Hariu, T.; Nakada, T.; Tsukui, K.; Osaka, T. // Journal of Applied Physics;6/15/1988, Vol. 63 Issue 12, p5751 

    Focuses on a study which investigated homoepitaxial growth processes and a 2x2 surface reconstruction of indium antimony (111) by molecular-beam epitaxy. Methodology of the study; Findings on critical temperature; Discussion on the quantitative interpretations of critical temperature.

  • Midwave infrared stimulated emission from a GaInSb/InAs superlattice. Miles, R.H.; Chow, D.H. // Applied Physics Letters;4/10/1995, Vol. 66 Issue 15, p1921 

    Examines the optical quality of GaInSb/InAs superlattice grown by molecular beam epitaxy. Use of cracked antimony source and postgrowth anneal procedure; Observation of band-to-band luminescence at room temperature; Effects of anneals on the optical and electrical properties of superlattices.

  • Modification of desorption phenomenon of Sb on Si surfaces by atomic hydrogen termination. Nakagawa, Kiyokazu; Kimura, Yoshinobu; Miyao, Masanobu // Applied Physics Letters;8/26/1996, Vol. 69 Issue 9, p1267 

    Sb sticking and desorption on hydrogen terminated and clean Si surfaces are studied using molecular beam epitaxy. When Sb atoms impinge on Si surfaces, Sb atoms accumulate on a clean Si surface in proportion to Sb deposition time, independently of substrate temperature. For a hydrogen terminated...

  • Trap suppression by isoelectronic In or Sb doping in Si-doped n-GaAs grown by molecular-beam epitaxy. Li, A. Z.; Kim, H. K.; Jeong, J. C.; Wong, D.; Schlesinger, T. E.; Milnes, A. G. // Journal of Applied Physics;10/1/1988, Vol. 64 Issue 7, p3497 

    Discusses a study which investigated the effects of isoelectronic doping of GaAs by indium or antimony on the electron deep levels in n-GaAs grown by molecular-beam-epitaxy (MBE). Reduction of the dominant traps M3 and M6; Devices sensitive to the presence of traps and dislocations in the...

  • High-resistivity GaSb grown by molecular-beam epitaxy. Polyakov, A. Y.; Stam, M.; Milnes, A. G.; Wilson, R. G.; Fang, Z. Q.; Rai-Choudhury, P.; Hillard, R. J. // Journal of Applied Physics;8/15/1992, Vol. 72 Issue 4, p1316 

    Analyzes the high-resistivity of gallium-antimony undoped layers grown by molecular beam epitaxy. Experimental approach; Results of the thermal probe measurements on both gallium-antimony/SI gallium arsenide and beveled gallium-antimony/n-gallium-antimony structures; Cause of the formation of...

  • Deposition markets to grow.  // R&D Magazine;May2002, Vol. 44 Issue 5, p13 

    Presents an outlook on the market for ion implantation equipment, services and materials in the U.S. in 2006. Annual growth rate in the market; Industrial applications of ion and molecular beam epitaxy.

  • Radiation enhanced diffusion in MgO. Van Sambeek, A.I.; Averback, R.S.; Flynn, C.P.; Yang, M.H.; Jager, W. // Journal of Applied Physics;6/15/1998, Vol. 83 Issue 12, p7576 

    Provides information on an experiment measuring radiation enhanced diffusion and ion beam mixing of 18O, Ca, and Zn buried tracer layers in MgO, grown by molecular beam epitaxy. Methodology used to conduct the experiment; Evaluation of radiation-enhanced diffusion in MgO; Information on...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics