TITLE

Secondary implantation of Sb into Si molecular beam epitaxy layers

AUTHOR(S)
Jorke, H.; Herzog, H.-J.; Kibbel, H.
PUB. DATE
September 1985
SOURCE
Applied Physics Letters;9/1/1985, Vol. 47 Issue 5, p511
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the influence of low-energy Si+ ions on the incorporation of Sb adatoms existing on growing (100) Si molecular beam epitaxy layers. At a growth temperature of 650 °C employed for these experiments an increase of incorporation of about three orders of magnitude compared to the spontaneous incorporation is obtained at ion flux densities of typically 1012 cm-2 s-1. Dopant activation coefficients of almost unity are established up to 1019 cm-3. The number of incorporated adatoms is found to increase proportionally with preadjusted adatom density as well as with Si+ ion dose. At an ion energy of 500 eV the constant of proportionality is estimated to be σI =(5±2)×10-16 cm2.
ACCESSION #
9818052

 

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