High resolution ultraviolet photoablation of SiOx films

Fiori, C.; Devine, R. A. B.
August 1985
Applied Physics Letters;8/15/1985, Vol. 47 Issue 4, p361
Academic Journal
The ability of UV laser radiation at 248 nm to cause the photoablation of SiO[sub x] films is demonstrated. Given the relatively low doses necessary to ablate significant SiO[sub x] thicknesses and the excellent etched wall verticality obtained, it appears that SiO[sub x] might be a viable UV photoresist. A brief discussion of the mechanisms leading to SiO[sub x] photoablation is presented.


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