Hydrogen profile in ion implanted polyethylene

Calcagno, L.; Foti, G.
August 1985
Applied Physics Letters;8/15/1985, Vol. 47 Issue 4, p363
Academic Journal
Change of the hydrogen concentration induced by ion irradiation in the polyethylene films has been studied by MeV proton backscattering. Ion implantation of polyethylene film results in a strong breakup of chemical bonds in the chains with a large hydrogen emission leaving a carbon enriched film. These effects are confined in a cylinder around the ion track, of cross section 10[sup -5] cm² and a length comparable with the ion range.


Related Articles

  • X-Ray-Emission Study of the Structure of Si:H Layers Formed by Low-Energy Hydrogen-Ion Implantation. Galakhov, V. R.; Antonova, I. V.; Shamin, S. N.; Aksenova, V. I.; Obodnikov, V. I.; Gutakovskiı, A. K.; Popov, V. P. // Semiconductors;May2002, Vol. 36 Issue 5, p568 

    Amorphous silicon layers formed by implantation of 24-keV hydrogen ions into SiO[sub 2]/Si and Si with doses of 2.7 × 10[sup 17] and 2.1 × 10[sup 17] cm[sup -2], respectively, were studied using ultrasoft X-ray emission spectroscopy with variations in the energy of excitation electrons....

  • Immobilization mechanisms for ion-implanted deuterium in aluminum. Myers, S. M.; Besenbacher, F.; No\rskov, J. K. // Journal of Applied Physics;9/1/1985, Vol. 58 Issue 5, p1841 

    Presents an experimental investigation of ion-implanted hydrogen in aluminum. Measurement of the binding of the hydrogen to irradiation defects; Discussion on whether trapping occurs either within the surface oxide or at its interface with the metal; Hydrogen trapping in the presence of the...

  • Physical mechanisms behind the ion-cut in hydrogen implanted silicon. Ho¨chbauer, T.; Misra, A.; Nastasi, M.; Mayer, J. W. // Journal of Applied Physics;9/1/2002, Vol. 92 Issue 5, p2335 

    Hydrogen implanted silicon has been shown to cleave upon annealing, thus facilitating the transfer of thin silicon slices to other substrates, a process known as "ion-cut." In our experiments 〈100〉 silicon wafers were implanted with 40 keV protons to a variety of ion doses ranging...

  • Effect of ion implantation on surface energy of ultrahigh molecular weight polyethylene. Chen, J. S.; Sun, Z.; Guo, P. S.; Zhang, Z. B.; Zhu, D. Z.; Xu, H. J. // Journal of Applied Physics;5/1/2003, Vol. 93 Issue 9, p5103 

    The effect of ion implantation including ion species (N[sub 2][sup +] and C[sub 3]H[sub 8][sup +]) and the fluences (1×10[sup 14]–5×10[sup 15] ions/cm[sup 2]) on the surface energy of ultrahigh molecular weight polyethylene (UHMWPE) were investigated. The total surface energy...

  • Ion beam hydrogenation of amorphous silicon. Tsuo, Y. S.; Smith, E. B.; Deb, S. K. // Applied Physics Letters;11/2/1987, Vol. 51 Issue 18, p1436 

    A Kaufman ion beam source was used to implant hydrogen atoms into glow-discharge-deposited amorphous silicon materials in which the hydrogen content had been driven out by heating. We found that the hydrogen atoms introduced by this low-energy (less than 700 eV) ion implantation method bonded...

  • Analyzing hydrogen with nuclear reactions. Picraux, Samuel T. // Physics Today;Oct77, Vol. 30 Issue 10, p42 

    Describes the types of nuclear-reaction techniques in hydrogen probe. Application of the techniques on hydrogen isotopes in various materials; Information on hydrogen implant studies; Advantages of the ion-beam techniques for implantation. INSET: Why study hydrogen?.

  • Hydrogen interaction with implantation induced point defects in p-type silicon. Fatima, S.; Jagadish, C. // Journal of Applied Physics;3/1/1999, Vol. 85 Issue 5, p2562 

    Presents information on a study which investigated the hydrogen interaction with implantation induced point defects and impurities in p-type silicon using deep level transient spectroscopy. Experimental details; Results and discussion.

  • The influence of boron ion implantation on hydrogen blister formation in n-type silicon. Hochbauer, T.; Walter, K.C. // Journal of Applied Physics;10/15/1999, Vol. 86 Issue 8, p4176 

    Presents information on a study which explored the influence of boron on the coalescence of hydrogen, formation of bubbles and finally surface blistering. Experimental procedures; Results and discussion; Conclusion.

  • Novel semiconductor substrate formed by hydrogen ion implantation into silicon. Li, Jianming // Applied Physics Letters;11/20/1989, Vol. 55 Issue 21, p2223 

    A high-resistivity layer formed beneath the silicon surface layer by using proton implantation and two-step annealing is described. Rapid thermal annealing with tungsten halogen lamps was carried out during the first annealing step and the time of the high-temperature treatment in the second...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics