TITLE

Quantitative photoelastic measurement of residual strains in undoped semi-insulating gallium arsenide

AUTHOR(S)
Yamada, Masayoshi
PUB. DATE
August 1985
SOURCE
Applied Physics Letters;8/15/1985, Vol. 47 Issue 4, p365
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A new quantitative photoelastic method has been developed to measure residual strains in undoped semi-insulating (001) GaAs substrates for integrated circuits. The absolute values of the shear strain e[sub xy] and the difference of the expansion and contraction strains e[sub yy] - e[sub xx] existing in the (001) substrate plane are quantitatively determined by using the present method. Their twodimensional distribution maps are demonstrated to exhibit fourfold symmetries rotating 45° to each other. The absolute values are found to be of the order of 10[sup -5] at the substrate edges.
ACCESSION #
9818037

 

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