TITLE

Quantitative photoelastic measurement of residual strains in undoped semi-insulating gallium arsenide

AUTHOR(S)
Yamada, Masayoshi
PUB. DATE
August 1985
SOURCE
Applied Physics Letters;8/15/1985, Vol. 47 Issue 4, p365
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A new quantitative photoelastic method has been developed to measure residual strains in undoped semi-insulating (001) GaAs substrates for integrated circuits. The absolute values of the shear strain e[sub xy] and the difference of the expansion and contraction strains e[sub yy] - e[sub xx] existing in the (001) substrate plane are quantitatively determined by using the present method. Their twodimensional distribution maps are demonstrated to exhibit fourfold symmetries rotating 45° to each other. The absolute values are found to be of the order of 10[sup -5] at the substrate edges.
ACCESSION #
9818037

 

Related Articles

  • Linear coefficients of photoelasticity in multilayer quantum well structures having a sloping bottom in exciton resonance regions. Ayukhanov, R. A.; Shkerdin, G. N. // Physics of the Solid State;Sep98, Vol. 40 Issue 9, p1582 

    An analytic expression is obtained for the linear coefficients of photoelasticity in multilayer quantum-well structures having a sloping bottom in the region of the fundamental exciton resonance. The coefficients of photoelasticity are calculated for a GaAs/Al[sub 0.28]Ga[sub 0.72]As...

  • Erratum: Identification of residual donors in high-purity epitaxial GaAs by magnetophotoluminescence [Appl. Phys. Lett. 51, 937 (1987)]. Bose, S. S.; Lee, B.; Kim, M. H.; Stillman, G. E. // Applied Physics Letters;10/19/1987, Vol. 51 Issue 16, p1288 

    Presents a correction of the error made in the article on epitaxial gallium arsenide semiconductors.

  • Model for degradation of band-gap photoluminescence in GaAs. Guidotti, Daniel; Hovel, Harold J. // Applied Physics Letters;10/10/1988, Vol. 53 Issue 15, p1411 

    A recombination-enhanced defect reaction model is described. It is based on nonradiative recombination of photoexcited carriers at particular crystal defect sites near a semiconductor surface. The model is general and correctly predicts, with only one adjustable parameter, the photoluminescence...

  • Local structure around Zn atoms diffused into the GaAs crystal. Kitano, T.; Matsumoto, Y.; Matsui, J. // Applied Physics Letters;10/10/1988, Vol. 53 Issue 15, p1390 

    We have studied the local structure around Zn atoms diffused into the GaAs crystal using the extended x-ray absorption fine structure method. Although Zn atoms are associated with vacancies at the first nearest neighbor (NN) sites, the first NN distance remains constant even where vacancies...

  • Photorefractive gain in GaAs under a dc electric field. Liu, Duncan T. H.; Cheng, Li-Jen; Rau, Mann-Fu; Wang, Faa-Ching // Applied Physics Letters;10/10/1988, Vol. 53 Issue 15, p1369 

    We report the first observation of a photorefractive gain coefficient as high as 2.6 cm-1 in the undoped liquid-encapsulated Czochralski-grown GaAs crystals at 1.06 μm under a dc electric field of 13 kV/cm without using the moving grating technique. The absorption coefficient of the crystals...

  • Optically enhanced photoconductivity in semi-insulating gallium arsenide. Desnica, U. V.; Šantic, B. // Applied Physics Letters;2/27/1989, Vol. 54 Issue 9, p810 

    Time evolution of photoconductivity of semi-insulated gallium arsenide illuminated at low temperatures with monochromatic 0.7–1.8 eV photons was studied. For low light intensity the photosensitivity increases with time by several orders of magnitude and exhibits different dynamics for...

  • Package's material eliminates cracking in GaAs microwave control device. Maliniak, David // Electronic Design;3/4/96, Vol. 44 Issue 5, p42 

    Reports that Mini-Systems Inc. has developed a packaging method for gallium arsenide (GaAs) electronic devices. Problems encountered in the conventional packaging of GaAs devices; Characteristics of the new packaging method.

  • Peculiarities of the Long-Range Effects in GaAs-Based Transistor Structures upon Combined Irradiation with Ions of Various Masses. Obolensky, S. V.; Skupov, V. D. // Technical Physics Letters;Jan2003, Vol. 29 Issue 1, p54 

    Anomalous distinctions in the depth profiles of charge carrier density in the active regions of GaAsbased structures were observed for samples irradiated from the rear side (through substrate) with molecular hydrogen and argon ions either separately or in a certain combined sequence. The maximum...

  • Band-edge photoluminescence of heavily doped In[sub x]Ga[sub 1-x]As[sub 1-y]P[sub y](?=1.2 �m). Karachevtseva, M. V.; Strakhov, V. A.; Yaremenko, N. G. // Semiconductors;Aug99, Vol. 33 Issue 8, p830 

    Band-edge photoluminescence spectra of heavily donor-doped samples of In[sub x]Ga[sub 1-x]As[sub 1-y]P[sub y] (x = 0.77, y = 0.53) were investigated in the temperature range (77-300) K. A theory of luminescence that takes into account fluctuations in the band-edge potentials due to nonuniform...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics