TITLE

Highly doped GaAs:Si by molecular beam epitaxy

AUTHOR(S)
Sacks, Robert; Shen, H.
PUB. DATE
August 1985
SOURCE
Applied Physics Letters;8/15/1985, Vol. 47 Issue 4, p374
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Highly doped (N[sup ++]) GaAs:Si with n up to 1.8 × l0[sup 19] cm[sup -3] has been grown by molecular beam epitaxy at a "normal" growth rate of ∼0.8 m/h[sup -1]. These layers have been studied by Raman spectroscopy, van der Pauw-Hall measurements, and capacitance-voltage plotting. They show no appreciable surface accumulation or diffusion of donors into low-doped layers grown on top of them, and thus should be suitable as buffer layers for n/N[sup +] devices as well as aiding in the production of low resistivity ohmic contacts. Resistivity of these layers has a lower limit of 4.75 × 10[sup -4] ω cm occurring at about 1.2 × 10[sup 19] cm[sup -3]. The possibility of this being an intrinsic lower limit to the resistivity of GaAs is discussed.
ACCESSION #
9818031

 

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