TITLE

Compensation of p-type cast polycrystalline silicon by hydrogen ion implantation at 300 °C

AUTHOR(S)
Martinuzzi, S.; Sebbar, M. A.; Gervais, J.
PUB. DATE
August 1985
SOURCE
Applied Physics Letters;8/15/1985, Vol. 47 Issue 4, p376
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Hydrogen ion implantation used to passivate grain boundaries and intragrain defects can also compensate p-type polycrystalline silicon within the implanted surface, when the implantation is done at 300 °C. This compensation may be explained by means of shallow acceptor neutralization.
ACCESSION #
9818029

 

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