Free-exciton luminescence in GaSb quantum wells confined by short-period AlSb-GaSb superlattices

Ploog, K.; Ohmori, Y.; Okamoto, H.; Stolz, W.; Wagner, J.
August 1985
Applied Physics Letters;8/15/1985, Vol. 47 Issue 4, p384
Academic Journal
Photoluminescence and photoluminescence excitation measurements at temperatures ranging from 4 to 300 K were performed on 9.2-nm GaSh quantum wells confined by AlSb-GaSb shortperiod superlattices. In the temperature range 4-200 K the photoluminescence from the highquality molecular beam epitaxially grown samples is dominated by free-exciton emission. This assignment is confirmed by photoluminescence excitation spectroscopy which reveals an energy separation of 11.5 meV between n = 1 heavy-hole and n = 1 light-hole free excitons for the 9.2nm wells. At Iow temperatures the photoluminescence line is shifted by only 7.5 meV to low energy from the heavy-hole excitonic peak observed in the excitation spectrum. This small value of the Stokes shift indicates the absence of impurity-related trapping of excitons.


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