TITLE

Laser-induced photochemical etching of SiO2 studied by x-ray photoelectron spectroscopy

AUTHOR(S)
Yokoyama, S.; Yamakage, Y.; Hirose, M.
PUB. DATE
August 1985
SOURCE
Applied Physics Letters;8/15/1985, Vol. 47 Issue 4, p389
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Thermally grown SiO[sub 2] on Si and quartz wafers have been photochemically etched in an NF[sub 3] gas containing 0-4 mol % hydrogen by using an ArF excimer laser (193 nm in wavelength) irradiation. In situ x-ray photoelectron spectroscopy of the etched surface at each step of the photochemical reaction and in situ infrared absorption measurements of the etching gas have revealed the elementary process of etching reactions on the surface and the resulting products in the gas phase.
ACCESSION #
9818020

 

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