TITLE

GaAs bipolar transistors grown on (100) Si substrates by molecular beam epitaxy

AUTHOR(S)
Fischer, R.; Chand, N.; Kopp, W.; Morkoç, H.; Erickson, L. P.; Youngman, R.
PUB. DATE
August 1985
SOURCE
Applied Physics Letters;8/15/1985, Vol. 47 Issue 4, p397
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have investigated the properties of GaAs homojunction bipolar transistors grown on (100) oriented Si substrates by molecular beam epitaxy. In a structure with a base thickness of 0.2 µm, a small-signal common emitter current gain fi of about 10 at a current density of 10 kA/cm² has been obtained. Current densities as high as 105 000 A/cm² were obtained in these devices without degradation demonstrating the excellent stability of this material. Since the minority-carrier lifetime is quite sensitive to defects in the base region, these measurements demonstrate the high quality of GaAs on Si substrates. From the collector current dependence of current gain, an ideality factor n = 1.5 for the emitter junction was obtained, indicating that space-charge recombination is an important mechanism in these devices. We also demonstrate that the entire GaAs on Si wafer is phase ordered by observing the orientation effect in the mesa etching. These results show that excellent minority-carrier properties can be obtained in GaAs on Si epitaxial layers despite the somewhat large dislocation density due to lattice mismatch.
ACCESSION #
9818016

 

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