TITLE

Rapid thermal annealing of interface states in aluminum gate metal-oxide-silicon capacitors

AUTHOR(S)
Reed, Michael L.; Fishbein, Bruce; Plummer, James D.
PUB. DATE
August 1985
SOURCE
Applied Physics Letters;8/15/1985, Vol. 47 Issue 4, p400
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Rapid thermal processing has been used to study the annealing of interface states in aluminum gate metal-oxide-silicon capacitors. Midgap D[sub it] values of 10[sup 12] cm[sup -2] eV[sup -1], as measured by the combined high-frequency/quasistatic capacitance-voltage method, drop to less than 2 × 10[sup 10] cm[sup -2] eV[sup -1] after 2 min at 300 °C and after only 5 s at 380 °C. This compares with a standard anneal time of 30 min at 450 °C commonly used in conventional furnace annealing. The temporal dependence of D[sub it] suggests that interface state annealing is not limited by transport of neutral hydrogen through the oxide. Room-temperature annealing is insignificant over a trial interval of several months.
ACCESSION #
9818014

 

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