Simultaneous diffusion of zinc and indium into GaAs: A new approach for the formation of low resistance ohmic contacts to compound semiconductors

Shealy, J. R.; Chinn, S. R.
August 1985
Applied Physics Letters;8/15/1985, Vol. 47 Issue 4, p410
Academic Journal
The simultaneous diffusion of zinc and indium into GaAs was performed prior to the deposition of a refractory contact metallization. This has resulted in low resistance contacts to p-type GaAs. We demonstrate that specific contact resistivities as low as 5 × 10[sup -7] and 2 × 10[sup -7 ω cm² are obtainable for nonalloyed and annealed contacts, respectively, using this technique. These specific contact resistances are the lowest values that have been reported for ohmic contacts to ptype GaAs. Furthermore, the apparatus used here should be easily adapted to the formation of low resistance n-type contacts by substituting for the zinc source a volatile source containing a group VI impurity such as Se or Te.


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