Perimeter-related current in high-field tunneling into SiO2

Hook, Terence B.; Ma, T. P.
August 1985
Applied Physics Letters;8/15/1985, Vol. 47 Issue 4, p417
Academic Journal
The spatial distribution of the electric field in a metal-oxide-silicon structure with finite gate dimensions is calculated and used to determine the current expected in the Fowler-Nordheim tunneling regime. The theoretical analysis predicts a greatly enhanced perimeter current when the gate acts as the cathode. In contrast, the edge of the gate does not significantly influence the current when the silicon substrate acts as the cathode. Experimental results are in qualitative agreement with the above expectation.


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