Theoretical and experimental capacitance-voltage behavior of Al0.3Ga0.7As/GaAs modulation-doped heterojunctions: Relation of conduction-band discontinuity to donor energy

Norris, George B.; Look, D. C.; Kopp, W.; Klem, J.; Morkoç, H.
August 1985
Applied Physics Letters;8/15/1985, Vol. 47 Issue 4, p423
Academic Journal
For the first time, we show that the capacitance-voltage behavior of modulation-doped heterojunctions may be accurately described by a first-principles theory that includes selfconsistent quantum two-dimensional (2-D) electron subbands in the GaAs, numerical solution of Poisson's equation for band bending and space charge in the (Al,Ga) As, and series resistance in the 2-D channel and heterointerface. The excellent agreement found between the theory and measurements on selected high-quality Al[sub 0.3] Ga[sub 0.7] As/GaAs heterojunctions allows accurate determination of the maximum 2-D carrier concentration. From this, we find a strong relationship between the conduction-band discontinuity and donor binding energy, giving offsets of 76 and 66% of the direct gap discontinuity for binding energies of 66 and 30 meV, as derived from published data.


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