0° phase mode operation in phased-array laser diode with symmetrically branching waveguide

Taneya, M.; Matsumoto, M.; Matsui, S.; Yano, S.; Hijikata, T.
August 1985
Applied Physics Letters;8/15/1985, Vol. 47 Issue 4, p341
Academic Journal
An AlGaAs phased-array laser with a novel index waveguide structure like the letter "Y" is described. In all arrays with such a structure, controllable selection of only 0° phase mode and complete suppression of 180° phase shift mode is achieved up to ∼65 mW in 2%-96% coated devices. The far-field patterns, near-field patterns, and spectra of the array are in good agreement with the theoretical results. The cw threshold currents are ∼100 mA, and the external differential quantum efficiencies are 57% per facet.


Related Articles

  • Observation of Maker fringes and estimation of χ(3) using picosecond nondegenerate four-wave mixing in AlGaAs waveguides. Le, H. Q.; Bossi, D. E.; Nichols, K. B.; Goodhue, W. D. // Applied Physics Letters;3/12/1990, Vol. 56 Issue 11, p1008 

    Nondegenerate four-wave mixing experiments have been conducted in Al0.2Ga0.8As ridge waveguides, using picosecond laser pulses. Maker fringes due to phase-matching requirements were clearly observed, and phase-matched nondegenerate mixing was achieved by utilizing the waveguide geometrical...

  • Fabrication and characterization of aluminum nitride pedestal-type optical waveguide1. Alvarado, M.A.; Pelegrini, M.V.; Pereyra, I.; Assumpção, T.A.A. de; Kassab, L.R.P.; Alayo, M.I. // Canadian Journal of Physics;Jul2014, Vol. 92 Issue 7/8, p951 

    In this paper we present the fabrication and characterization of pedestal-type optical waveguides using aluminum nitride (AlN) as core layer. To the best knowledge of the authors, the utilization of AlN as core layer in pedestal-type waveguides has not been studied. The AlN thin films were...

  • Edge- and surface-emitting distributed Bragg reflector laser with multiquantum well active/passive waveguides. Kojima, Keisuke; Noda, Susumu; Mitsunaga, Kazumasa; Kyuma, Kazuo; Hamanaka, Koichi; Nakayama, Takashi // Applied Physics Letters;2/2/1987, Vol. 50 Issue 5, p227 

    A novel AlGaAs/GaAs distributed Bragg reflector laser utilizing a multiquantum well structure both as an active waveguide and as a low loss passive waveguide was fabricated. The threshold current was 102 mA at room temperature, and the differential quantum efficiency for the edge- and...

  • Long-lived dry-etched AlGaAs/GaAs ridge waveguide laser diodes. Harding, C. M.; Waters, R. G. // Applied Physics Letters;5/28/1990, Vol. 56 Issue 22, p2175 

    Chemically assisted ion beam etching has been utilized to fabricate ridge waveguide GaAs/AlGaAs lasers which are as reliable, if not more so, than their oxide stripe counterparts. Results on 60- and 5-μm-wide ridge waveguide lasers with 600 μm cavity lengths as compared to oxide stripe...

  • AlGaAs/GaAs diode lasers (1020-1100 nm) with an asymmetric broadened single transverse mode waveguide. Slipchenko, S.; Podoskin, A.; Vinokurov, D.; Bondarev, A.; Kapitonov, V.; Pikhtin, N.; Kop'ev, P.; Tarasov, I. // Semiconductors;Aug2013, Vol. 47 Issue 8, p1079 

    Approaches to the development of laser heterostructures with a broadened single-mode waveguide are studied theoretically and experimentally. It is shown that the use of n- and p-type emitters with different refractive-index values ensures lasing in the fundamental mode only, if the thickness of...

  • Photosignal enhancement in Al-GaAs diodes due to surface plasmons and guided wave modes. Tamm, I. R.; Dawson, P.; Pate, M. A.; Grey, R.; Hill, G. // Journal of Applied Physics;12/15/1993, Vol. 74 Issue 12, p7481 

    Presents information on a study which investigated photosignal enhancement in aluminum-gallium arsenide diodes due to surface plasmons and guided wave modes. Methods; Results; Discussion.

  • Epitaxial waveguides of aluminum garnet. Gualtieri, D. M.; Morris, R. C. // Journal of Applied Physics;7/1/1993, Vol. 74 Issue 1, p20 

    Studies epitaxial waveguides of high refractive index aluminum garnets. Overview of previous studies on garnet waveguides; Description of procedures specific to the epitaxy of aluminum garnets; Characterization of garnet waveguides.

  • Raman effect in AlGaAs waveguides for subpicosecond pulses. Kao, Y.-H.; Islam, M. N.; Saylor, J. M.; Slusher, R. E.; Hobson, W. S. // Journal of Applied Physics;8/15/1995, Vol. 78 Issue 4, p2198 

    Investigates the Raman effect in aluminum (Al)-gallium (Ga)-arsenic (As) waveguides. Measurement of the spontaneous Raman scattering cross sections; Energy interaction between pump and probe pulses by modyfying the coupled propagation equations for AlGaAs waveguides; Overview of coupled...

  • Near-threshold mode synchronization and Q switching in diode lasers with a fast saturated absorber. Gubenko, A. E.; Venus, G. B.; Gadzhiev, I. M.; Portnoi, E. L. // Technical Physics Letters;May99, Vol. 25 Issue 5, p344 

    The near-threshold lasing regimes of AlGaAs lasers with an implanted saturated absorber under short pulsed pumping are investigated experimentally. A near-threshold mode-synchronization regime is obtained.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics