Properties of carbon films by dc plasma deposition

Fujii, Kazutaka; Shohata, Nobuaki; Mikami, Masao; Yonezawa, Masatomo
August 1985
Applied Physics Letters;8/15/1985, Vol. 47 Issue 4, p370
Academic Journal
Perfectly smooth transparent carbon films deposit onto room-temperature silicon wafers in a dc plasma of methane (CH[sub 4]) and hydrogen (H[sub 2]). Transmission electron microscope analysis reveals that the films consist primarily of amorphous carbon (a-C). The nearest neighbor C-C bond length of a-C formed at low discharge current densities or low working pressures approaches that of diamond. Electrical resistivity, calculated using V-I curves for the Al-C-Si structure, is more than I0[sup 13] ω cm. A face-centered-cubic phase with a lattice constant of 4.96 Â and diamond, both of which form at relatively high pressures, consist of crystallites having a diameter of about 100 Â.


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