Effect of Fe on the carrier instability in HgSe

Vaziri, M.; Debska, U.; Reifenberger, R.
August 1985
Applied Physics Letters;8/15/1985, Vol. 47 Issue 4, p407
Academic Journal
The variation in the electron carrier concentration as a function of annealing conditions in HgSe, Hg[sub 1-x] Mn[sub x] Se, and Hg[sub 1-x] Fe[sub x] Se has been studied. Our results show that the carrier concentration in the Hg[sub 1-x] Fe[sub x] Se system with x ≥ 0.003 is very stable and shows little or no change under various annealing conditions. Measurements of the Dingle temperature from Shubnikov-de Haas oscillations, in addition to Hall mobilities determined at 4.2 K, indicate a significantly longer collision time for the conduction electrons in Hg[sub 1-x] Fe[sub x] Se for x ≤ 0.03 than in samples of HgSe with the same electron concentration.


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