TITLE

Effect of Fe on the carrier instability in HgSe

AUTHOR(S)
Vaziri, M.; Debska, U.; Reifenberger, R.
PUB. DATE
August 1985
SOURCE
Applied Physics Letters;8/15/1985, Vol. 47 Issue 4, p407
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The variation in the electron carrier concentration as a function of annealing conditions in HgSe, Hg[sub 1-x] Mn[sub x] Se, and Hg[sub 1-x] Fe[sub x] Se has been studied. Our results show that the carrier concentration in the Hg[sub 1-x] Fe[sub x] Se system with x ≥ 0.003 is very stable and shows little or no change under various annealing conditions. Measurements of the Dingle temperature from Shubnikov-de Haas oscillations, in addition to Hall mobilities determined at 4.2 K, indicate a significantly longer collision time for the conduction electrons in Hg[sub 1-x] Fe[sub x] Se for x ≤ 0.03 than in samples of HgSe with the same electron concentration.
ACCESSION #
9817978

 

Related Articles

  • Spatial Ordering and Interference Scattering of Electrons by a System of Mixed-Valence Iron Ions in HgSe : Fe Crystals. Kuleev, I. G.; Arapova, I. Yu. // Physics of the Solid State;Mar2001, Vol. 43 Issue 3, p420 

    The spatial ordering of charges in mixed-valence systems is considered. The dependence of the correlation sphere radius on the iron impurity content is obtained from the balance equation for the d holes and neutral centers in the short-range order cluster of a Fe[sup 3+] ion. The penetrating...

  • Reciprocal drag of electrons and phonons in strongly doped HgFeSe semiconductors. Lyapilin, I. I.; Bikkin, Kh. M. // Semiconductors;Jun99, Vol. 33 Issue 6, p648 

    The previously observed unusual dependences of the thermoelectric and thermomagnetic coefficients of strongly doped HgFeSe crystals on temperature and magnetic field intensity are studied theoretically. It is shown that the observed dependences are due to the combined effect of electron...

  • Effect of the Mutual Dragging of Electrons and Phonons on the Thermomagnetic Effects in HgSe. Bikkin, Kh. M.; Lonchakov, A. T.; Lyapilin, I. I. // Physics of the Solid State;Feb2000, Vol. 42 Issue 2, p207 

    The longitudinal and transverse Nemst-Ettingshausen (NE) effects were measured in HgSe samples doped with various concentrations of gallium, 0.6 × 10[sup 18] < N(Ga) < 4.7 × 10[sup 18] cm[sup -3]. The NE measurements were performed for the classical interval of magnetic field strengths...

  • Superconductor hits a new high. Geake, Elisabeth // New Scientist;10/2/93, Vol. 140 Issue 1893, p14 

    Reports on a mercury compound's breaking of the temperature record for superconductivity. Material's loss of electrical resistance when cooled to -113 degrees celsius; Experimentation by a team led by Paul Chu of the University of Texas, Houston; Discovery of mercury superconductors by French...

  • Absorption spectra of Se and HgI[sub 2] chains in channels of AlPO[sub 4]-5 single crystal. Tang, Z.K.; Loy, Michael M.T. // Applied Physics Letters;1/6/1997, Vol. 70 Issue 1, p34 

    Investigates the absorption spectra of selenium (Se) and mercuric iodide in channels of AlPO[sub 4]-5 (AFI) single crystal. Shift of the lowest electronic excitation states of the isolated chains; Congruence of the results with the theoretical expectation; Differences in the behavior of Se and...

  • Transmission electron microscopy of the induced damage by argon implantation in (111) HgCdTe at room temperature. Aguirre, Myriam H.; Cánepa, Horacio R.; Walsöe de Reca, Noemı E. // Journal of Applied Physics;11/15/2002, Vol. 92 Issue 10, p5745 

    HgCdTe (MCT) is an important semiconductor material used for infrared photovoltaic detectors. Although ion implantation is a widely used technique in the manufacture of devices based on MCT to obtain n/p junctions, a detailed understanding of the n-type behavior of the unannealed damage region...

  • Use of cation-stabilized conditions to improve compatibility of CdTe and HgTe molecular beam epitaxy. Arias, José; Singh, Jasprit // Applied Physics Letters;10/9/1989, Vol. 55 Issue 15, p1561 

    Reflection high-energy electron diffraction (RHEED) dynamic studies are used to reveal the strong differences in growth kinetics of CdTe and HgTe grown by molecular beam epitaxy. These differences arise from the stronger CdTe bond compared to the HgTe bond. Surface migration activation barriers...

  • Experimental study of manifestations of resonance scattering of conduction electrons on transition-element impurities in mercury selenide. Okulov, V. I.; Gergert, A. V.; Govorkova, T. E.; Korolyov, A. V.; Lonchakov, A. T.; Sabirzyanova, L. D.; Paranchich, S. Yu.; Andriyichuk, M. D.; Romanyuk, V. P. // Low Temperature Physics;Oct2005, Vol. 31 Issue 10, p872 

    An interpretation of the experimental data on the low-temperature conductivity and magnetic susceptibility of mercury selenide containing donor impurities of transition elements is developed on the basis of electron resonance scattering theory in the Friedel approach. Both existing data and...

  • Generalized relativistic effective core potential and relativistic coupled cluster calculation of the spectroscopic constants for the HgH molecule and its cation. Mosyagin, Nikolai S.; Titov, Anatoly V.; Eliav, Ephraim; Kaldor, Uzi // Journal of Chemical Physics;Aug2001, Vol. 115 Issue 5, p2007 

    Generalized relativistic effective core potential (GRECP) calculations of spectroscopic constants of the HgH molecule ground and low excited states and the HgH[sup +] cation ground state are carried out, with correlation included by the Fock-space relativistic coupled cluster (RCC) method. Basis...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics