Dependence of threshold current on the number of wells in AlGaAs-GaAs quantum well lasers

Blood, P.; Fletcher, E. D.; Woodbridge, K.
August 1985
Applied Physics Letters;8/1/1985, Vol. 47 Issue 3, p193
Academic Journal
GaAs-AlGaAs multiple quantum well injection lasers have been grown by molecular beam epitaxy with different numbers (N) of uncoupled GaAs wells 25 Ã… wide symmetrically disposed about the center of a 4000-Ã…-wide waveguide. The devices emit at about 770 nm and for N = 4 the broad area threshold current density is 1.1 kA cm[sup -2]. The threshold current increases with increasing N (2 < N < 40) and this can be accounted for by changes in the optical confinement factor and the active "volume," which implies that changes in capture probability with N in this structure are small.


Related Articles

  • Optical transitions and acceptor binding energies in GaAs/AlxGa1-xAs single quantum well heterostructures grown by molecular beam epitaxy. Pearah, P. J.; Klem, J.; Peng, C. K.; Henderson, T.; Masselink, W. T.; Morkoç, H.; Reynolds, D. C. // Applied Physics Letters;7/15/1985, Vol. 47 Issue 2, p166 

    Single quantum wells of varying well size (150-300 Ã…) exhibiting sharp photoluminescence lines were grown by molecular beam epitaxy. Photoluminescence structure and intensity were comparable to high quality multiple quantum wells in that linewidths as low as 0.5 meV and transitions...

  • Pair-groove-substrate GaAs/AlGaAs multiquantum well lasers by molecular beam epitaxy. Mannoh, Masaya; Yuasa, Tonao; Naritsuka, Shigeya; Shinozaki, Keisuke; Ishii, Makoto // Applied Physics Letters;10/1/1985, Vol. 47 Issue 7, p728 

    We investigated molecular beam epitaxial growth characteristics on (001) GaAs substrates with a pair of etched grooves along the <110> direction. It is found that, as the growth proceeds, the mesa width between the pair of grooves gradually decreases and that the grown mesa surface becomes...

  • Photoluminescence and photoreflectance from GaAs/AlAs multiple quantum wells. Oh, Y. T.; Kang, T. W.; Kim, T. W. // Journal of Applied Physics;9/1/1995, Vol. 78 Issue 5, p3376 

    Presents a study that investigated the intermixing behavior of aluminum and gallium in gallium arsenide (GaAs)/aluminum-gallium-arsenic (AlGaAs) multiple quantum wells grown by molecular-beam epitaxy. Use of photoluminescence and photoreflectance; Importance of GaAs/AlGaAs in optical,...

  • A study of the coupling efficiency versus grating periodicity in a normal incident GaAs/AlGaAs multiquantum well infrared detector. Yu, Larry S.; Li, Sheng S.; Wang, Y. H.; Kao, Y. C. // Journal of Applied Physics;9/15/1992, Vol. 72 Issue 6, p2105 

    Presents a detailed study of the dependence of coupling quantum efficiency on the grating periodicity of planar metal grating coupled gallium arsenide/aluminum-gallium-arsenic quantum well infrared photodetectors. Background on quantum well infrared photodetectors; Use of molecular beam epitaxy...

  • AlGaAs/GaAs multiquantum-well heterostructures for long-wavelength (8-10 μm) IR photodetectors. Butyagin, O.; Katsavets, N.; Kogan, I.; Krasovitsky, D.; Kulikov, V.; Chalyi, V.; Dudin, A.; Cherednichenko, O. // Technical Physics Letters;May2012, Vol. 38 Issue 5, p436 

    We have studied AlGaAs/GaAs multiquantum-well heterostructures grown by molecular beam epitaxy in an STE-3532 setup (SemiTEq, St. Petersburg), which are intended for long-wavelength IR photodetectors operating on inter-subband transitions. Quantum wells (QWs) in the obtained heterostructures are...

  • Patterned quantum well semiconductor laser arrays. Kapon, E.; Harbison, J. P.; Yun, C. P.; Florez, L. T. // Applied Physics Letters;1/23/1989, Vol. 54 Issue 4, p304 

    Low-threshold arrays of GaAs/AlGaAs patterned quantum well semiconductor lasers were grown by molecular beam epitaxy on periodically corrugated substrates. Uncoated arrays of ∼14 lasers operated with threshold curents of 3.6 mA per laser and emitted up to 375 mW from a single facet under...

  • In0.2Ga0.8As single strained quantum well lasers with GaAs/AlGaAs short-period superlattice barrier layers grown by molecular beam epitaxy. Hayakawa, T.; Matsumoto, K.; Horie, H.; Nagai, M.; Morishima, M.; Ishigame, Y.; Isoyama, A. // Journal of Applied Physics;10/15/1993, Vol. 74 Issue 8, p5285 

    Focuses on the preparation of indium-gallium (Ga)-arsenic (As) single strained quantum well lasers with gallium arsenide/aluminum-Ga-As short-period superlattice barrier layers. Use of molecular beam epitaxy; Cause of the reduction of carrier leakage from quantum well to barrier layers; Effect...

  • Smooth, pseudosmooth, and rough GaAs/AlxGa1-xAs interfaces: Effect of substrate misorientation. Massies, J.; Deparis, C.; Neri, C.; Neu, G.; Chen, Y.; Gil, B.; Auvray, P.; Regreny, A. // Applied Physics Letters;12/18/1989, Vol. 55 Issue 25, p2605 

    GaAs/AlxGa1-xAs quantum well and superlattice structures have been grown at 600 °C by molecular beam epitaxy on GaAs (001) substrates exactly oriented or slightly misoriented towards (111) Ga and (111) As. It is shown that for the growth conditions used, the step orientation (nature) has a...

  • Channeled-substrate GaAs/AlGaAs multiple quantum well lasers grown by molecular beam epitaxy. Wu, Yao-Hwa; Werner, Michael; Wang, Shyh // Applied Physics Letters;1984, Vol. 45 Issue 6, p606 

    (GaAl)As/GaAs multiple quantum well channeled-substrate lasers with lateral index guiding have been made by molecular beam epitaxy. They operate stably in a single longitudinal mode.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics