TITLE

Dependence of threshold current on the number of wells in AlGaAs-GaAs quantum well lasers

AUTHOR(S)
Blood, P.; Fletcher, E. D.; Woodbridge, K.
PUB. DATE
August 1985
SOURCE
Applied Physics Letters;8/1/1985, Vol. 47 Issue 3, p193
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
GaAs-AlGaAs multiple quantum well injection lasers have been grown by molecular beam epitaxy with different numbers (N) of uncoupled GaAs wells 25 Ã… wide symmetrically disposed about the center of a 4000-Ã…-wide waveguide. The devices emit at about 770 nm and for N = 4 the broad area threshold current density is 1.1 kA cm[sup -2]. The threshold current increases with increasing N (2 < N < 40) and this can be accounted for by changes in the optical confinement factor and the active "volume," which implies that changes in capture probability with N in this structure are small.
ACCESSION #
9817969

 

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