Minimizing dc drift in LiNbO3 waveguide devices

Gee, C. M.; Thurmond, G. D.; Blauvelt, H.; Yen, H. W.
August 1985
Applied Physics Letters;8/1/1985, Vol. 47 Issue 3, p211
Academic Journal
improved stability against electrical dc bias drift has been demonstrated in LiNbO[sub 3] electro-optic modulators by replacing the commonly used SiO[sub 2] buffer layer with indium tin oxide (ITO), a transparent conductor. The long term drift of the modulators having an ITO buffer layer with a sheet resistivity of ∼20 Ω/... is less than 0.3% in 8 h. The mechanism of the dc drift phenomenon is discussed using an electrical equivalent circuit model of the modulator.


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