GaAs sawtooth superlattice laser emitting at wavelengths λ>0.9 μm

Schubert, E. F.; Fischer, A.; Horikoshi, Y.; Ploog, K.
August 1985
Applied Physics Letters;8/1/1985, Vol. 47 Issue 3, p219
Academic Journal
A new type of semiconductor superlattice laser grown by molecular beam epitaxy is realized in GaAs. The active region of the injection laser consists of alternating n and p Dirac-delta doped layers resulting in a sawtooth-shaped conduction-band and valence-band edge. The band gap of this new GaAs superlattice is smaller than the GaAs bulk band gap. Room-temperature operation of broad-area GaAs sawtooth superlattice (STS) injection lasers is demonstrated at a wavelength of 905 nm. The threshold current density of the STS laser is 2.2 kA/cm².


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