TITLE

Effects of As impurities on the solidification velocity of Si during pulsed laser annealing

AUTHOR(S)
Peercy, P. S.; Thompson, Michael O.; Tsao, J. Y.
PUB. DATE
August 1985
SOURCE
Applied Physics Letters;8/1/1985, Vol. 47 Issue 3, p244
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The effect of As dopants on the solidification velocity during pulsed laser annealing of Si was measured using the transient conductance technique. At high concentrations, As is found to decrease the solidification velocity; for 7 at. % As, the velocity decreases ∼20% as the interface approaches the peak of the As distribution, followed by a velocity increase when the interface exits the region of maximum As concentration. The measurements are interpreted in terms of a decrease in the melting temperature. The observation of surface nucleation to produce buried molten layers and internal nucleation of melt at higher As concentrations supports this interpretation.
ACCESSION #
9817942

 

Related Articles

  • Advantages of two-step annealing for 1-MeV arsenic-ion-implanted layers in silicon. Inada, T.; Iwasaki, H.; Koyama, Y. // Journal of Applied Physics;4/1/1991, Vol. 69 Issue 7, p4116 

    Provides information on a study which investigated the effects of two-step annealing on the crystalline and electrical properties of buried n-type layers formed in silicon by arsenic implantation. Residual effects of rapid thermal annealing; Rutherford backscattering measurements; Effects of...

  • Rapid thermal annealing of dopants implanted into preamorphized silicon. Seidel, T. E.; Knoell, R.; Poli, G.; Schwartz, B.; Stevie, F. A.; Chu, P. // Journal of Applied Physics;7/15/1985, Vol. 58 Issue 2, p683 

    Focuses on a study which described rapid thermal annealing of dopants implanted into preamorphized silicon. Location where dislocation loops occur; Manner in which spinning dislocations are eliminated; Factors that nearly show normal diffusive behavior for B or arsenic dopants for 10-second...

  • Effect of Thermal Annealing of Radiation Defects on the Noise Characteristics of Silicon p-n Structures with a Thin Multiplication Region. Baranouski&icaron;, A.K.; Kuchinski&icaron;, P.V.; Savenok, E.D. // Semiconductors;Jan2003, Vol. 37 Issue 1, p50 

    Specific features of changes in the noise spectral density and the lifetime of minority charge carriers in Si p-n structures with a thin multiplication region under thermal annealing of radiation defects were studied. It is shown that the change in the frequency characteristics of noise in p-n...

  • Nature of the nuclei for thermal donor formation in silicon (or another variant of accelerated oxygen diffusion). Neımash, V. B.; Puzenko, E. A.; Kabaldin, A. N.; Kraıchinskiı, A. N.; Kras’ko, N. N. // Semiconductors;Dec99, Vol. 33 Issue 12, p1279 

    The influence of preliminary heat treatment at 800 °C on the accumulation and annealing kinetics of thermal donors formed at 450 °C in silicon single crystals is investigated by performing four-point measurements of the electrical resistivity. The activation energies for the generation and...

  • Interfacial Structures of Si[sub 3]N[sub 4] on Si (100) & Si(111). Chou, L. J.; Huang, M. L.; Hsieh, J. Y.; Chueh, Y. L.; Gwo, S.; Hsueh, C. C.; Pan, Sam // International Journal of Modern Physics B: Condensed Matter Phys;11/20/2002, Vol. 16 Issue 28/29, p4493 

    The initial stages of NH[sub 3] exposure on Si (100) & (111) at different substrate temperatures and post annealing in different ambient gases have been investigated. On the Si (100) surface, at 850 °C and very high (∼1050 °C) temperatures, NH[sub 3] dissociated and nitridized the Si...

  • Effect of annealing ambient on the removal of oxide precipitates in high-dose oxygen implanted.... Seraphin, Supapan; Krause, Stephen J.; Roitman, Peter; Simons, David S.; Cordts, Bernhard F. // Applied Physics Letters;12/2/1991, Vol. 59 Issue 23, p3003 

    Examines the effect of annealing ambient on the precipitate removal processes in high-dose oxygen implanted silicon. Surface analyses used in the study; Rate of removal of oxide precipitates from the top silicon layer; Reduction of the removal due to the oxynitride complex formation.

  • Formation of luminescent silicon by laser annealing of a-Si:H. El-Kader, K.M.A.; Oswald, J. // Applied Physics Letters;5/9/1994, Vol. 64 Issue 19, p2555 

    Details the preparation of luminescent silicon by laser annealing of amorphous hydrogenated silicon deposited on silica substrates. Exhibition of photoluminescence (PL) comparable to PL spectra of porous silicon; Study of the morphology of the sample; Absence of degradation of the PL spectra.

  • Effect of annealing profile on defect annihilation, crystallinity and size distribution of germanium nanodots in silicon oxide matrix. Kan, E.W.H.; Choi, W.K.; Leoy, C.C.; Chim, W.K.; Antoniadis, D.A.; Fitzgerald, E.A. // Applied Physics Letters;9/8/2003, Vol. 83 Issue 10, p2058 

    A double-step annealing profile has been used to synthesize germanium nanodots embedded in silicon oxide matrix with low defects, good crystallinity, good size distribution, and shape. A significant reduction in the photoluminescence was observed for samples annealed at temperature higher than...

  • Effect of annealing time and temperature on the formation of threading and projected range dislocations in 1 MeV boron implanted Si. Jones, K. S.; Jasper, Craig; Hoover, Allen // Applied Physics Letters;3/19/2001, Vol. 78 Issue 12, p1664 

    The effect of annealing temperature and time on the formation of threading dislocations was investigated for high energy boron implants into silicon. 1 MeV B[sup +] was implanted at a dose of 1x10[sup 14]/cm[sup 2] into <100> Si wafers. The wafers were subsequently annealed in either a rapid...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics