TITLE

Low-temperature SiO2 growth using fluorine-enhanced thermal oxidation

AUTHOR(S)
Morita, M.; Aritome, S.; Tsukude, M.; Murakawa, T.; Hirose, M.
PUB. DATE
August 1985
SOURCE
Applied Physics Letters;8/1/1985, Vol. 47 Issue 3, p253
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A new low-temperature oxidation technique of silicon to obtain high quality Si-SiO[sub 2] interface and bulk SiO[sub 2] layer is presented. A few tens-nanometer-thick oxide layers are grown within 30 min at temperatures between 600 and 800 °C by fluorine-enhanced thermal oxidation using an O[sub 2] + NF[sub 3] gas mixture. Fluorine atoms incorporated in the oxide layer are substituted by oxygen atoms through post-annealing in pure oxygen gas at the same temperature as oxidation. An interface state density as low as 2 × 10[sup 10] cm[sup -2] eV[sup -1] near midgap is achieved for oxides grown at 800 °C and 8 × 10[sup 10] cm[sup -2] eV[sup -1] even for oxides at 600 °C. The dielectric breakdown strength of the oxide is improved by the post-annealing in O[sub 2].
ACCESSION #
9817937

 

Related Articles

  • An interface reaction mechanism for the dry oxidation of silicon. Moharir, S. S.; Chandorkar, A. N.; Vasi, J. // Journal of Applied Physics;3/1/1989, Vol. 65 Issue 5, p2171 

    Develops a mathematical model for dry silicon oxidation in the thin-oxide regime based on the adsorption of oxygen at the silicon-silicon dioxide interface. Description of the proposed mechanism; Processes that take place at the silicon-silicon dioxide interface during oxidation; Relation...

  • Passivation of (111) Si/SiO[sub 2] interface by fluorine. Wang, X.W.; Ma, T.P. // Applied Physics Letters;5/25/1992, Vol. 60 Issue 21, p2634 

    Examines the effect of fluorine on the radiation hardness of (111) silicon/silicon dioxide interface. Distribution of interface traps for a set of x-ray irradiated metal oxide semiconductors capacitors; Monotical improvement of radiation-induced interface traps; Passivation of the precursor for...

  • Early stages of interface-trap transformation in metal-SiO2-(100)Si structures. Wang, Yu; Ma, T. P.; Barker, R. C. // Journal of Applied Physics;9/1/1990, Vol. 68 Issue 5, p2520 

    Presents a study that examined the interface-trap transformation in metal-silicon dioxide-silicon semiconductors. Methodology; Analysis of the capacitance-voltage characteristics of the samples; Examination of the interface-trap distribution in the metal-oxide-semiconductors.

  • High-temperature stability of Si/SiO2 interfaces and the influence of SiO flux on thermomigration of impurities in SiO2. Celler, G. K.; Trimble, L. E. // Applied Physics Letters;12/19/1988, Vol. 53 Issue 25, p2492 

    We analyze experimentally unidirectional mass transport of As implanted into a SiO2 film covered with Si and heated to 1405 °C in a temperature gradient. The data can only be explained if we postulate that the thermomigration process is mediated by a flux of SiO molecules, flowing from the...

  • Interface defects of ultrathin rapid-thermal oxide on silicon. Stathis, J.H.; Buchanan, D.A.; Quinlan, D.L.; Parsons, A.H.; Kotecki, D.E. // Applied Physics Letters;5/24/1993, Vol. 62 Issue 21, p2682 

    Examines the interface defects in ultrathin silica prepared by rapid-thermal oxidation (RTO). Observation of interface state peak in silicon band gap; Removal of interface state by gas annealing; Difference of interface properties between RTO and furnace oxide.

  • Oxygen gettering and oxide degradation during annealing of Si/SiO2/Si structures. Devine, R. A. B.; Warren, W. L.; Xu, J. B.; Wilson, I. H.; Paillet, P.; Leray, J.-L. // Journal of Applied Physics;1/1/1995, Vol. 77 Issue 1, p175 

    Presents a study that examined the microscopic nature of the degradation of oxide layers in silicon (Si)/silicon dioxide (SiO[sub2])/Si structures induced by annealing. Result of the electrical measurements of fixed oxide charge induced by X irradiation; Oxygen-vacancy defect profiles near to...

  • Characterization of Si-SiO2 interface traps in p-metal-oxide-semiconductor structures with thin oxides by conductance technique. Hung, K. K.; Cheng, Y. C. // Journal of Applied Physics;11/15/1987, Vol. 62 Issue 10, p4204 

    Presents a study which aimed to characterize the silicon-silica interface traps in p-metal-oxide-semiconductor structures with very thin gate oxides by conductance and quasistatic techniques. Review of the theory of the conductance technique; Description of the hole capture cross section;...

  • Migration of oxygen vacancy in HfO2 and across the HfO2/SiO2 interface: A first-principles investigation. Capron, Nathalie; Broqvist, Peter; Pasquarello, Alfredo // Applied Physics Letters;11/5/2007, Vol. 91 Issue 19, p192905 

    Oxygen vacancy migration is studied in monoclinic HfO2 and across its interface with SiO2 through density functional calculations. In HfO2, long-range diffusion shows activation barriers of 2.4 and 0.7 eV for the neutral and doubly positively charged vacancy, respectively. In the latter case,...

  • Nature of interfaces and oxidation processes in Ge+-implanted Si. Srivatsa, A. R.; Sharan, S.; Holland, O. W.; Narayan, J. // Journal of Applied Physics;5/15/1989, Vol. 65 Issue 10, p4028 

    Presents a study which investigated the nature of the interfaces between silicon dioxide and germanium-rich layer(silicon oxide/germanium[subx]silicon[sub1-x] in germanium[sub+] -ion implanted and oxidized silicon (100) samples. Experimental details; Results and discussion; Conclusion.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics