Low-temperature SiO2 growth using fluorine-enhanced thermal oxidation

Morita, M.; Aritome, S.; Tsukude, M.; Murakawa, T.; Hirose, M.
August 1985
Applied Physics Letters;8/1/1985, Vol. 47 Issue 3, p253
Academic Journal
A new low-temperature oxidation technique of silicon to obtain high quality Si-SiO[sub 2] interface and bulk SiO[sub 2] layer is presented. A few tens-nanometer-thick oxide layers are grown within 30 min at temperatures between 600 and 800 °C by fluorine-enhanced thermal oxidation using an O[sub 2] + NF[sub 3] gas mixture. Fluorine atoms incorporated in the oxide layer are substituted by oxygen atoms through post-annealing in pure oxygen gas at the same temperature as oxidation. An interface state density as low as 2 × 10[sup 10] cm[sup -2] eV[sup -1] near midgap is achieved for oxides grown at 800 °C and 8 × 10[sup 10] cm[sup -2] eV[sup -1] even for oxides at 600 °C. The dielectric breakdown strength of the oxide is improved by the post-annealing in O[sub 2].


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