Lattice thermal conductivity of small grain size PbSnTe and PbGeTe thermoelectric material

Rowe, D. M.; Bhandari, C. M.
August 1985
Applied Physics Letters;8/1/1985, Vol. 47 Issue 3, p255
Academic Journal
The effect of phonon grain-boundary scattering on the lattice thermal, conductivity λ[sub L] of PbSnTe and PbGeTe has been investigated theoretically as a function of grain size and doping. It is concluded that for optimally doped thermoelectric material with a mean grain size of 0.5 µm, the reductions in λ[sub L] of PbSnTe and PbGeTe are 11% and 14%, respectively, compared to corresponding "single crystal" or large grain-size material. This reduction in λ[sub L], which accompanies the use of very small grain-size material, would be reflected in a significant increase in the thermoelectric figure of merit and, hence, in the conversion efficiency of generators based on lead telluride technology.


Related Articles

  • Introduction to thermoelectrics. Mahan, G. D. // APL Materials;2016, Vol. 4 Issue 10, p1 

    The main ideas in the theory of thermoelectrics are discussed. We discuss power generation, thermoelectric cooling, transport theory, the Seebeck coefficient, and phonon drag.

  • Decreasing giant splitting of longitudinal and transverse optical phonons in Pb[sub x]Sr[sub 1-x]TiO[sub 3] due to Pb covalency. Kuo, Shou-Yi; Li, Chung-Ting; Hsieh, Wen-Feng // Applied Physics Letters;10/14/2002, Vol. 81 Issue 16, p3019 

    In contrast to the increase of giant splitting of longitudinal optical (LO) and transverse optical (TO) phonons in polycrystalline Ba[sub x]Sr[sub 1 - x]TiO[sub 3] [Phys. Rev. B. 64, 224103-1 (2001)], a decreasing splitting of the softest A[sub 1] (1TO) and the hardest A[sub 1] (3LO) was...

  • Enhanced phonon scattering by mass and strain field fluctuations in Nb substituted FeVSb half-Heusler thermoelectric materials. Fu, Chenguang; Xie, Hanhui; Zhu, T. J.; Xie, Jian; Zhao, X. B. // Journal of Applied Physics;12/15/2012, Vol. 112 Issue 12, p124915 

    The substitution of V by Nb in FeV1-xNbxSb (x = 0, 0.1, 0.2, 0.3, and 0.4) half-Heusler thermoelectric materials was introduced to lower the lattice thermal conductivity by the alloy scattering. A significantly reduced thermal conductivity of ∼5.5 W m-1 K-1 for the FeV0.6Nb0.4Sb was...

  • Transport Properties of Ni and PbTe Under Pressure. Jacobsen, Matthew; Kumar, Ravhi; Cornelius, Andrew // Journal of Electronic Materials;Apr2012, Vol. 41 Issue 4, p633 

    The high-pressure transport properties have been determined for nickel and PbTe. Nickel shows a reduction in electrical resistivity, an increase in thermal conductivity, and a variable effect on the Seebeck coefficient with pressure. In PbTe, a dramatic decrease in resistivity and a slow...

  • Thermoelectric Properties of PbTe, SnTe, and GeTe at High Pressure: an Ab Initio Study. Xu, Lanqing; Wang, Hui-Qiong; Zheng, Jin-Cheng // Journal of Electronic Materials;May2011, Vol. 40 Issue 5, p641 

    In this work we present an ab initio study of the transport properties of PbTe, SnTe, and GeTe crystals in the B1 structure under zero and high pressure and analyze the possibility of pressure-induced thermoelectric performance enhancement. GeTe displays higher thermoelectric coefficients in...

  • Variations of Thermoelectric and Mechanical Properties of Large Lead Telluride Samples Produced by a Short-Term Sintering Method. Schmitz, Andreas; Stiewe, Christian; Müller, Eckhard // Journal of Electronic Materials;May2011, Vol. 40 Issue 5, p543 

    lthough lead telluride is a widely used thermoelectric (TE) material for generator applications in the intermediate temperature range, its mechanical properties have not been fully understood yet. Especially sintered PbTe samples have hardly been investigated with regard to their mechanical...

  • Phonon transport control by nanoarchitecture including epitaxial Ge nanodots for Si-based thermoelectric materials. Shuto Yamasaka; Yoshiaki Nakamura; Tomohiro Ueda; Shotaro Takeuchi; Akira Sakai // Scientific Reports;10/9/2015, p1 

    Phonon transport in Si films was controlled using epitaxially-grown ultrasmall Ge nanodots (NDs) with ultrahigh density for the purpose of developing Si-based thermoelectric materials. The Si/Ge ND stacked structures, which were formed by the ultrathin SiO2 film technique, exhibited lower...

  • Semiconductor Nanostructure Design for Thermoelectric Property Control. Nakamura, Y.; Ishibe, T.; Taniguchi, T.; Terada, T.; Hosoda, R.; Sakane, Sh. // International Journal of Nanoscience;Jun-Aug2019, Vol. 18 Issue 3/4, pN.PAG 

    We present the methodologies for developing high-performance thermoelectric materials using nanostructured interfaces by reviewing our three studies and giving the new aspect of nanostructuring results. (1) Connected Si nanocrystals exhibited ultrasmall thermal conductivity. The drastic thermal...

  • Avoided crossing of rattler modes in thermoelectric materials. CHRISTENSEN, MOGENS; ABRAHAMSEN, ASGER B.; CHRISTENSEN, NIELS B.; JURANYI, FANNI; ANDERSEN, NIELS H.; LEFMANN, KIM; ANDREASSON, JAKOB; BAHL, CHRISTIAN R. H.; IVERSEN, BO B. // Nature Materials;Oct2008, Vol. 7 Issue 10, p811 

    Engineering of materials with specific physical properties has recently focused on the effect of nano-sized ‘guest domains’ in a ‘host matrix’ that enable tuning of electrical, mechanical, photo-optical or thermal properties. A low thermal conductivity is a prerequisite...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics