TITLE

HgTe-CdTe-InSb heterostructures by molecular beam epitaxy

AUTHOR(S)
Ballingall, J. M.; Leopold, D. J.; Peterman, D. J.
PUB. DATE
August 1985
SOURCE
Applied Physics Letters;8/1/1985, Vol. 47 Issue 3, p262
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
HgTe-CdTe heterostructures have been grown by molecular beam epitaxy on (100) InSb substrates. Separate elemental Hg and Te beams were used for the HgTe growth at a substrate temperature of 160 °C. X-ray diffraction measurements indicate that thin epitaxiat layers are of high crystalline quality. Secondary-ion mass spectroscopy measurements show substantial In and Sb diffusion into the epitaxial layers with a concentration enhancement at the HgTe-CdTe interface.
ACCESSION #
9817932

 

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