Improvements in the modulation amplitude of submicron gratings produced in n-InP by direct photoelectrochemical etching

Lum, R. M.; Ostermayer, F. W.; Kohl, P. A.; Glass, A. M.; Ballman, A. A.
August 1985
Applied Physics Letters;8/1/1985, Vol. 47 Issue 3, p269
Academic Journal
The modulation amplitude of gratings produced by maskless etching techniques decreases rapidly at spatial frequencies > 500 mm[sup -1]. This has limited the usefulness of these techniques for producing the submicron gratings required for distributed feedback lasers. We report improvements as large as a factor of 100 in the direct photoelectrochemical (PEC) etching of gratings in n-InP which were accomplished by changing the composition and concentration of the electrolyte solutions. Measurements on the PEC etching characteristics of n-InP in HF, HCl, HBr, and H[sub 2]SO[sub 4] solvents are presented.


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