Interfacial properties of InP and phosphorus deposited at low temperature

Schachter, R.; Olego, D. J.; Baumann, J. A.; Bunz, L. A.; Raccah, P. M.; Spicer, W. E.
August 1985
Applied Physics Letters;8/1/1985, Vol. 47 Issue 3, p272
Academic Journal
We are reporting on a large reduction in the density of states on the InP surface by a phosphorus overlayer. Phosphorus, which is deposited at low temperatures, is a high-resistivity amorphous semiconductor that provides chemical and physical continuity at the interface. The density of surface states, extracted from capacitance-voltage data on metal-insulator-capacitor diodes, is ∼10[sup 11] cm² eV at 0.1 eV below the conduction-band minimum. The low density of states near the conduction band is interpreted as a reduction of phosphorus vacancies at the P-InP interface.


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