New shallow acceptor levels in neutron-irradiated Si:Ga

Fischer, David W.; Mitchel, W. C.
August 1985
Applied Physics Letters;8/1/1985, Vol. 47 Issue 3, p281
Academic Journal
Fourier transform infrared absorption spectroscopy has been used to reveal the presence of two previously unknown shallow acceptor levels formed by neutron irradiation of Si:Ga. Absorption peaks corresponding to the strongest lines of groups III-like acceptor spectra were observed and were determined to originate from ground states with binding energies of 42.4 and 56.3 meV. These levels are designated A[sub 3] and A[sub 4], respectively. The annealing behavior of both levels is discussed and compared to other known shallow acceptor levels created in neutron-irradiated Si:Ga.


Related Articles

  • Correlation of FT-IR epitaxial thickness measurement. Kostoulas, Yiorgos; Kneissl, Gerhart; Kohl, Ian // Solid State Technology;Jul2000, Vol. 43 Issue 7, p289 

    Presents a study which examined the use of the Fourier transform infrared (FT-IR) technology for the measurement of silicon epitaxial layer thickness. Relevant theory; Comparison of the performance of a spectroscopic tool with interferogram-based tools; Epi layer thickness and transition region...

  • Infrared spectroscopy of a silicon surface bombarded by nitrogen ions. Bachurin, V. I.; Lepshin, P. A.; Smirnov, V. K.; Churilov, A. B. // Technical Physics Letters;Mar98, Vol. 24 Issue 3, p214 

    Transmission Fourier-transform infrared spectroscopy was used to study the formation of a ripple topology on a silicon surface bombarded by nitrogen ions, together with the formation of silicon nitride, the evolution of its composition and structure. For the first time, an attempt is made to...

  • Local vibrational modes of the Mg–H acceptor complex in GaN. Go¨tz, W.; Johnson, N. M.; Bour, D. P.; McCluskey, M. D.; Haller, E. E. // Applied Physics Letters;12/9/1996, Vol. 69 Issue 24, p3725 

    Local vibrational modes (LVMs) are reported for Mg-doped GaN grown by metalorganic chemical vapor deposition. Hetero-epitaxial layers of GaN:Mg, either as-grown, thermally activated, or deuterated, were investigated with low-temperature, Fourier-transform infrared absorption spectroscopy. The...

  • Using Fourier transform infrared grazing incidence reflectivity to study local vibrational models... Sun, W.H.; Chen, K.M. // Journal of Applied Physics;5/1/1999, Vol. 85 Issue 9, p6430 

    Focuses on a study which used Fourier transform infrared (FTIR) grazing incidence reflectivity and FTIR transmission methods to study gallium nitride films grown on sapphire. Experimental methods; Results and discussion; Conclusion.

  • A stress gettering mechanism in semi-insulating, copper-contaminated gallium arsenide. Kang, Nam Soo; Zirkle, Thomas E.; Schroder, Dieter K. // Journal of Applied Physics;7/1/1992, Vol. 72 Issue 1, p82 

    Presents a study that demonstrated a stress gettering mechanism in semi-insulating, copper-contaminated gallium arsenide using cathodoluminescence, thermally stimulated current spectroscopy and low temperature Fourier transform infrared spectroscopy. Background on gettering; Cross-sectional...

  • Coupled cluster prediction of vibrational band intensities for SiF[sub 2] and PF[sup +][sub 2]. Youngshang Pak; Woods, R. Claude // Journal of Chemical Physics;5/15/1997, Vol. 106 Issue 19, p8283 

    Presents ab initio estimates of infrared band intensities for SiF[sub 2] and PF[sup +][sub 2] silicon ions. Application of Fourier transform infrared spectroscopy to the stretching fundamentals of SiF[sub 2].

  • FTIR matrix isolation study of carbon-13 substituted SiC2. Shepherd, Richard A.; Graham, W. R. M. // Journal of Chemical Physics;6/1/1985, Vol. 82 Issue 11, p4788 

    The products from vaporizing silicon carbide at 2900 K and quenching in argon at 8 K have been studied using Fourier transform infrared spectroscopy. Under the assumption of various possible geometries, calculations based on two vibrations observed at 1741.1 and 824.4 cm-1 were made to predict...

  • Model-based analysis for precise and accurate epitaxial... Charpenay, Sylvie; Rosenthal, Peter; Kneissl, Gerhart; Hoener Gondran, Carolyn; Huff, Howard // Solid State Technology;Jul98, Vol. 41 Issue 7, p161 

    Provides information on Fourier transform infrared (FTIR) spectroscopy epitaxial silicon characterization techniques. Methods to measure epi thickness; Commercial FTIR methods; Precision and accuracy of model-based FTIR analysis.

  • Interstitial oxygen determination near epitaxial silicon and Czochralski silicon interface. Geddo, M.; Pivac, B. // Applied Physics Letters;1/28/1991, Vol. 58 Issue 4, p370 

    Studies the oxygen content near epitaxial layer-substrate silicon interface using a micro Fourier transform infrared technique. Presence of interstitial oxygen in the epitaxial layer when it was grown on n-type substrates; Absence of oxygen when grown on p-type substrates; Results of systematic...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics