New shallow acceptor levels in neutron-irradiated Si:Ga

Fischer, David W.; Mitchel, W. C.
August 1985
Applied Physics Letters;8/1/1985, Vol. 47 Issue 3, p281
Academic Journal
Fourier transform infrared absorption spectroscopy has been used to reveal the presence of two previously unknown shallow acceptor levels formed by neutron irradiation of Si:Ga. Absorption peaks corresponding to the strongest lines of groups III-like acceptor spectra were observed and were determined to originate from ground states with binding energies of 42.4 and 56.3 meV. These levels are designated A[sub 3] and A[sub 4], respectively. The annealing behavior of both levels is discussed and compared to other known shallow acceptor levels created in neutron-irradiated Si:Ga.


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