TITLE

New shallow acceptor levels in neutron-irradiated Si:Ga

AUTHOR(S)
Fischer, David W.; Mitchel, W. C.
PUB. DATE
August 1985
SOURCE
Applied Physics Letters;8/1/1985, Vol. 47 Issue 3, p281
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Fourier transform infrared absorption spectroscopy has been used to reveal the presence of two previously unknown shallow acceptor levels formed by neutron irradiation of Si:Ga. Absorption peaks corresponding to the strongest lines of groups III-like acceptor spectra were observed and were determined to originate from ground states with binding energies of 42.4 and 56.3 meV. These levels are designated A[sub 3] and A[sub 4], respectively. The annealing behavior of both levels is discussed and compared to other known shallow acceptor levels created in neutron-irradiated Si:Ga.
ACCESSION #
9817914

 

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