Modulation-doped (Al,Ga)As/AlAs superlattice: Electron transfer into AlAs

Drummond, T. J.; Fritz, I. J.
August 1985
Applied Physics Letters;8/1/1985, Vol. 47 Issue 3, p284
Academic Journal
A modulation-doped superlattice of n-(Al,Ga)As and undoped AlAs has been grown by molecular beam epitaxy. At cryogenic temperatures, electrons transfer into the undoped AlAs layers and enhanced mobilities as high as 1000 cm²/Vs are observed for the first time. It is shown that by properly accounting for the depth of the donor level in modulation-doped heterostructures reasonably good limits can be set on the gamma point conduction-band discontinuity at the heterojunction. It is found that this discontinuity is approximately 60-65% of the band-gap difference between the two alloys, in good agreement with other recent determinations.


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