Non-alloyed ohmic contact to n-GaAs by solid phase epitaxy

Marshall, E. D.; Chen, W. X.; Wu, C. S.; Lau, S. S.; Kuech, T. F.
August 1985
Applied Physics Letters;8/1/1985, Vol. 47 Issue 3, p298
Academic Journal
A non-alloyed ohmic contact to n-type GaAs has been demonstrated. The technique of solid phase epitaxy through a transport medium has been used to obtain a metal/Ge(n[sup +], epi)/ GaAs(n, 〈100〉) heterostructure. The resulting contact displays a smooth surface and low contact resistivity (∼10[sup -6]-10[sup -5] &Ohms; cm²) when compared with standard Au-Ge contacts on n-GaAs with similar doping concentrations (∼10[sup 18]/cm³).


Related Articles

  • Nonalloyed ohmic contacts to n-GaAs by solid-phase epitaxy of Ge. Marshall, E. D.; Zhang, B.; Wang, L. C.; Jiao, P. F.; Chen, W. X.; Sawada, T.; Lau, S. S.; Kavanagh, K. L.; Kuech, T. F. // Journal of Applied Physics;8/1/1987, Vol. 62 Issue 3, p942 

    Presents a study that described nonalloyed ohmic contacts on n-gallium arsenide by solid-phase epitaxy of germanium. Concept of the nonalloyed ohmic contacts; Details on the experimental procedure; Discussion on the results of the study.

  • Formation of deep complexes in ZnSe during ohmic contact annealing. Heuken, M.; Sollner, J. // Applied Physics Letters;4/6/1992, Vol. 60 Issue 14, p1694 

    Analyzes the formation of ohmic contacts to zinc selenide (ZnSe) grown by metalorganic vapor-phase epitaxy on gallium arsenide. Effects of strain and gallium outdiffusion on ohmic contact properties; Fabrication of optoelectronic devices from ZnSe epitaxial layers; Dependence of the barrier...

  • Low-resistance nonalloyed ohmic contacts to Si-doped molecular beam epitaxial GaAs. Kirchner, P. D.; Jackson, T. N.; Pettit, G. D.; Woodall, J. M. // Applied Physics Letters;7/1/1985, Vol. 47 Issue 1, p26 

    We have found evidence that the surface depletion charge density in molecular beam epitaxial n-GaAs doped heavily with Si approaches the Si concentration. In situ metallization of the as-grown surface of GaAs uniformly doped with Si at 1×1020 cm-3 yields a specific contact resistivity of 1.3...

  • Delta-doped ohmic contacts to n-GaAs. Schubert, E. F.; Cunningham, J. E.; Tsang, W. T.; Chiu, T. H. // Applied Physics Letters;8/4/1986, Vol. 49 Issue 5, p292 

    A new type of nonalloyed ohmic contact to GaAs is realized by molecular beam epitaxy. The ohmic characteristic of the metal-semiconductor junction is obtained by placing a highly δ-doped donor layer a few lattice constants away from the metal-semiconductor interface of the contact and thus...

  • Very low resistance nonalloyed ohmic contacts using low-temperature molecular beam epitaxy of GaAs. Patkar, M.P.; Chin, T.P. // Applied Physics Letters;3/13/1995, Vol. 66 Issue 11, p1412 

    Explores very low resistance ohmic contacts using low-temperature molecular beam epitaxy of gallium arsenide films. Improvement of film stability; Protection of high space charge density layer on the surface; Result of heavy beryllium doping.

  • Contact resistances of NiGeAu, PdGeTiPt, and TiPd ohmic contacts to GaAs and their temperature dependence from 4.2 to 350 K. Jones, K. A.; Linfield, E. H.; Frost, J. E. F. // Applied Physics Letters;12/30/1996, Vol. 69 Issue 27, p4197 

    The specific contact resistance (rc) of NiGeAu and PdGeTiPt ohmic contacts to n-GaAs and TiPd and PdGeTiPt ohmic contacts to p+-GaAs were determined as a function of temperature between 4.2 and 350 K. The low rc obtained for some of the contacts at 4.2 K implies that much of the total contact...

  • Regrown ohmic contacts to thin GaAs layers and two-dimensional electron gas. Palevski, A.; Solomon, P.; Kuech, T. F.; Tischler, M. A. // Applied Physics Letters;1/8/1990, Vol. 56 Issue 2, p171 

    We report on the first realization of extremely low resistivity regrown ohmic contacts to a variety of GaAs/AlGaAs structures using selective epitaxy. For planar regrown n+-GaAs contacts to n-GaAs we have obtained contact resistivity values ∼1×10-7 Ω cm2, and ∼1×10-8 Ω...

  • Nonalloyed ohmic contacts on low-temperature molecular beam epitaxial GaAs: Influence of deep donor band. Yamamoto, H.; Fang, Z-Q.; Look, D. C. // Applied Physics Letters;10/8/1990, Vol. 57 Issue 15, p1537 

    The Ohmic nature of the nonalloyed metal contact on molecular beam epitaxial GaAs grown at 200 °C was studied. The specific contact resistances at room temperature and 120 K were 1.5×10-3 and 7.0×10-1 Ω cm2, respectively. These values are anomalously low considering that the...

  • Ohmic contacts to p-GaAs with p+/p regrown structures formed by metalorganic molecular beam epitaxy. Shimawaki, Hidenori; Furuhata, Naoki; Honjo, Kazuhiko // Journal of Applied Physics;6/1/1991, Vol. 69 Issue 11, p7939 

    Studies a metalorganic molecular beam epitaxy p[sup+]-gallium arsenide layer grown for the p-type ohmic contacts. Specific contacts resistances; Regrown contacts for exploring the regrown p[sup+]/p interface; Schematic diagram of regrown contacts and their corresponding equivalent circuit models.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics