Non-alloyed ohmic contact to n-GaAs by solid phase epitaxy

Marshall, E. D.; Chen, W. X.; Wu, C. S.; Lau, S. S.; Kuech, T. F.
August 1985
Applied Physics Letters;8/1/1985, Vol. 47 Issue 3, p298
Academic Journal
A non-alloyed ohmic contact to n-type GaAs has been demonstrated. The technique of solid phase epitaxy through a transport medium has been used to obtain a metal/Ge(n[sup +], epi)/ GaAs(n, 〈100〉) heterostructure. The resulting contact displays a smooth surface and low contact resistivity (∼10[sup -6]-10[sup -5] &Ohms; cm²) when compared with standard Au-Ge contacts on n-GaAs with similar doping concentrations (∼10[sup 18]/cm³).


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