Dry, laser-assisted rapid HBr etching of GaAs

Brewer, P. D.; McClure, D.; Osgood, R. M.
August 1985
Applied Physics Letters;8/1/1985, Vol. 47 Issue 3, p310
Academic Journal
Dry, rapid etching of GaAs has been accomplished using an excimer laser (ArF, 193 nm) with HBr etching gas by photochemical initiation. Spatially uniform etch rates of up to 8 µm/min have been achieved on large-area, masked substrates. Selective crystallographic etching is observed and controlled in the process.


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