TITLE

Dry, laser-assisted rapid HBr etching of GaAs

AUTHOR(S)
Brewer, P. D.; McClure, D.; Osgood, R. M.
PUB. DATE
August 1985
SOURCE
Applied Physics Letters;8/1/1985, Vol. 47 Issue 3, p310
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Dry, rapid etching of GaAs has been accomplished using an excimer laser (ArF, 193 nm) with HBr etching gas by photochemical initiation. Spatially uniform etch rates of up to 8 µm/min have been achieved on large-area, masked substrates. Selective crystallographic etching is observed and controlled in the process.
ACCESSION #
9817899

 

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