TITLE

Field drift of the hydrogen-related, acceptor-neutralizing defect in diodes from hydrogenated silicon

AUTHOR(S)
Tavendale, A. J.; Alexiev, D.; Williams, A. A.
PUB. DATE
August 1985
SOURCE
Applied Physics Letters;8/1/1985, Vol. 47 Issue 3, p316
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Field drift of the hydrogen-related, acceptor-neutralizing defect has been detected in reversebiased Schottky barrier and junction diodes made from plasma-hydrogenated, p-type, borondoped silicon. Significant differences in diffusion depths and drift rates between hydrogenated and deuterated silicon indicate that the mobile neutralizing species is possibly uncomplexed monoatomic hydrogen with a donor level above the mid band gap. Hydrogen-boron pairing explains qualitatively the boron acceptor concentration profiles in hydrogen-neutralized, p-type silicon.
ACCESSION #
9817895

 

Related Articles

  • Hydrogen Sensitivity of a Silicon Schottky Diode Increased by Modification of the Semiconductor Surface Microrelief. Tikhov, S. V.; Pavlov, D. A.; Shilyaev, P. A.; Shobolov, E. L.; Os�kin, A. A. // Technical Physics Letters;May2002, Vol. 28 Issue 5, p355 

    A nearly atomically smooth semiconductor surface in a Schottky diode based on the palladiumoxide-silicon structure is modified by treating with a selective etchant. It is shown that the appearance of a developed microrelief (with an average roughness of 22-32 nm and a fractal dimension of...

  • In situ measurements of hydrogen motion and bonding in silicon. Seager, C. H.; Anderson, R. A.; Brice, D. K. // Journal of Applied Physics;10/1/1990, Vol. 68 Issue 7, p3268 

    Presents a study on the hydrogenation of both n- and p-type metal/thin oxide/silicon diodes using high frequency capacitance profiling. Implantation of low energy hydrogen; Sample preparation of silicon diodes; Electrical measurement techniques.

  • Dark current-voltage characteristics of transverse asymmetric hydrogenated amorphous silicon diodes. Martins, R.; Fortunato, E. // Journal of Applied Physics;9/1/1995, Vol. 78 Issue 5, p3481 

    Presents a study that provided a basis for the interpretation of transverse asymmetric amorphous silicon diodes. Background of the field of applications of amorphous silicon; Structures of silicon-hydrogen diodes; Information on the spatial carriers' flow distribution within a typical...

  • Hydrogen redistribution induced by negative-bias-temperature stress in metal–oxide–silicon diodes. Liu, Ziyuan; Fujieda, Shinji; Terashima, Koichi; Wilde, Markus; Fukutani, Katsuyuki // Applied Physics Letters;9/23/2002, Vol. 81 Issue 13, p2397 

    Poly-Si/SiO[sub 2]/Si diodes in which oxides were grown thermally under wet oxidation conditions and subsequently treated by a post-oxidation anneal (POA) have been characterized electrically and chemically before and after applying negative-bias-temperature stress (NBTS). It was confirmed that...

  • Photocurrent multiplication in hydrogenated amorphous silicon p-i-n photodiode films. Sawada, Kazuaki; Mochizuki, Chichiro // Applied Physics Letters;9/12/1994, Vol. 65 Issue 11, p1364 

    Observes the photocurrent multiplication of hydrogenated amorphous silicon p-i-n photodiodes. Fabrication of photodiodes on a heavily doped n-type silicon substrate; Function of amorphous silicon films in various electronic fields; Impact of using plasma enhanced chemical vapor deposition...

  • Light-illumination-induced transformation of electron traps in hydrogen-implanted n-type silicon. Tokuda, Yutaka; Shimada, Hitoshi // Journal of Applied Physics;11/15/1999, Vol. 86 Issue 10, p5630 

    Presents a study which examined light-illumination-induced transformation of electron traps in silicon with transient spectroscopy for gold diodes. Use of hydrogen implantation; Methodology; Results and discussion.

  • Electrical characteristics of hydrogen implanted silicon Schottky diodes having large difference in metal work function. Yapsir, A. S.; Lu, T.-M.; Hadizad, P.; Corelli, J. C.; Sugerman, A.; Bakhru, H. // Journal of Applied Physics;5/15/1988, Vol. 63 Issue 10, p5040 

    Discusses a study on the electrical characteristics of hydrogen implanted silicon Schottky diodes with large difference in metal work function. Experiment procedures; Results and discussion; Conclusions.

  • Mechanism of formation of the response of a hydrogen gas sensor based on a silicon MOS diode. Gaman, V. I.; Balyuba, V. I.; Gritsyk, V. Yu.; Davydova, T. a.; Kalygina, V. M. // Semiconductors;Mar2008, Vol. 42 Issue 3, p334 

    Experimental data on the dependence of the flat-band voltage and relaxation time for the capacitance of the space-charge region in an MOS diode (Pd-SiO2- n-Si) on the hydrogen concentration in a hydrogen/air gaseous mixture are discussed. It is assumed that variation in the flat-band voltage U ...

  • Effects of hydrogen on Al/p-Si Schottky barrier diodes. Jia, Y. Q.; Qin, G. G. // Applied Physics Letters;2/12/1990, Vol. 56 Issue 7, p641 

    Hydrogen was incorporated into B-doped p-type crystalline silicon in three different ways: boiling the sample in water, exposing the sample to hydrogen plasma, growing silicon in a hydrogen atmosphere. Al-contact Schottky barrier diodes were made on both the hydrogenated and unhydrogenated...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics