Field drift of the hydrogen-related, acceptor-neutralizing defect in diodes from hydrogenated silicon

Tavendale, A. J.; Alexiev, D.; Williams, A. A.
August 1985
Applied Physics Letters;8/1/1985, Vol. 47 Issue 3, p316
Academic Journal
Field drift of the hydrogen-related, acceptor-neutralizing defect has been detected in reversebiased Schottky barrier and junction diodes made from plasma-hydrogenated, p-type, borondoped silicon. Significant differences in diffusion depths and drift rates between hydrogenated and deuterated silicon indicate that the mobile neutralizing species is possibly uncomplexed monoatomic hydrogen with a donor level above the mid band gap. Hydrogen-boron pairing explains qualitatively the boron acceptor concentration profiles in hydrogen-neutralized, p-type silicon.


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