TITLE

Measurement of silicon interstitial diffusivity

AUTHOR(S)
Griffin, P. B.; Fahey, P. M.; Plummer, J. D.; Dutton, R. W.
PUB. DATE
August 1985
SOURCE
Applied Physics Letters;8/1/1985, Vol. 47 Issue 3, p319
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A conceptually simple experiment to measure silicon interstitial diffusivity is described. The structure uses a silicon wafer with buried layers deep in the bulk. Oxidation of the wafer surface generates interstitials that diffuse into the wafer and enhance the buried layer diffusion. The results show that the interstitial profiles are fiat out to 40 µm for the times and temperatures investigated. We can thus conclude that the interstitials move significantly faster than previously thought.
ACCESSION #
9817894

 

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