TITLE

Low loss GaAs optical waveguides grown by the metalorganic chemical vapor deposition method

AUTHOR(S)
Hiruma, K.; Inoue, H.; Ishida, K.; Matsumura, H.
PUB. DATE
August 1985
SOURCE
Applied Physics Letters;8/1/1985, Vol. 47 Issue 3, p186
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In order to realize the low loss ridge optical waveguide, high-purity GaAs and Ga[sub 1-x] Al[sub x] As (0 < x < 0.1) epitaxial layers were grown by the metalorganic chemical vapor deposition method. The residual, free-carrier concentration was reduced to 10[sup 14] cm[sup -3] after ten samples had been grown in the same reactor. Ridge optical waveguides fabricated showed propagation losses of 0.8 dB/cm for the GaAs homostructure waveguide and of 0.2 dB/cm for the GaAs-GaAlAs heterostructure waveguide at 1.3-µm wavelength.
ACCESSION #
9817881

 

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