Monolithically integrated thermoelectric controlled laser diode

Dutta, N. K.; Cella, T.; Brown, R. L.; Huo, D. T. C.
August 1985
Applied Physics Letters;8/1/1985, Vol. 47 Issue 3, p222
Academic Journal
The fabrication and performance characteristics of a monolithically integrated thermoelectric controlled laser diode are described. The thermoelectric element is the n-InP substrate. The lasers (λ ∼ 1.51 µm InGaAsP) have threshold currents of ∼20 mA and operate kink free to > 10 mW/ facet. A variation of active region temperature of ± 2.5 °C has been achieved using 50 mA of thermoelectric controller current. The observed frequency tuning rate associated with this temperature shift is ∼0.5 GHz/mA. The device is useful for applications that require a high degree of frequency stability or small frequency tuning. Some potential lightwave system applications are in single-frequency transmission systems, coherent transmission systems, optical amplifiers, resonant external cavity modulators, and injection locking.


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