TITLE

Infrared photoluminescence spectra from HgTe-CdTe superlattices

AUTHOR(S)
Hetzler, S. R.; Baukus, J. P.; Hunter, A. T.; Faurie, J. P.; Chow, P. P.; McGill, T. C.
PUB. DATE
August 1985
SOURCE
Applied Physics Letters;8/1/1985, Vol. 47 Issue 3, p260
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the first observation of infrared photoluminescence from HgTe-CdTe superlattices. A superlattice grown to have layers of HgTe 38-40 Å thick and layers of CdTe 18-20 Å thick is found to show a peak in the 140-K spectra at 105 meV (11.8 µm). A second superlattice grown to have HgTe layers 50 Å thick and CdTe layers 50 Å thick is found to show a peak at 205 meV (6.0 µm) at 170 K. In both cases, the energy of the luminescence is significantly lower than that for HgCdTe alloys with the same average composition as each sample.
ACCESSION #
9817867

 

Related Articles

  • Picosecond carrier dynamics and tunneling-assisted recombination in photorefractive delta-doped... Ralph, Stephen E.; Lacaita, Andrea; Capasso, Federico; Malik, Roger J. // Applied Physics Letters;4/1/1991, Vol. 58 Issue 13, p1375 

    Reports on the time-resolved photoluminescence of photorefractive delta-doped superlattices with picosecond resolution. Use of the time-correlated photon counting technique; Determination of the dynamics of the structure by recombination in flatband regions.

  • Photoluminescence study of lateral carrier confinement and compositional intermixing in.... Chalmers, S.A.; Weman, H. // Applied Physics Letters;4/6/1992, Vol. 60 Issue 14, p1676 

    Presents the photoluminescence study of lateral carrier confinement and compositional intermixing in (aluminum, gallium)antimony lateral superlattices. Comparison to the photoluminescence of (aluminum, gallium)antimony alloy quantum well; Deduction of compositional intermixing and lateral...

  • Photoluminescence studies of ZnTe-CdTe strained-layer superlattices. Miles, R. H.; Wu, G. Y.; Johnson, M. B.; McGill, T. C.; Faurie, J. P.; Sivananthan, S. // Applied Physics Letters;5/19/1986, Vol. 48 Issue 20, p1383 

    Photoluminescence from ZnTe-CdTe strained-layer superlattices has been observed for the first time. Superlattices with CdTe and ZnTe layer thicknesses between 20 and 51 Ã… have been compared with CdxZn1-xTe alloys. The superlattices display intense visible photoluminescence which is observed...

  • Photoluminescence and the band structure of InAsSb strained-layer superlattices. Kurtz, S. R.; Osbourn, G. C.; Biefeld, R. M.; Lee, S. R. // Applied Physics Letters;7/18/1988, Vol. 53 Issue 3, p216 

    Infrared photoluminescence measurements were performed on InAs0.13Sb0.87 /InSb strained-layer superlattices. In thick layered structures we observed very low energy transitions proving that a type II superlattice occurs in the InAsSb system. Band structures were calculated based on estimates of...

  • Electronic and optical properties of periodically Si delta-doped InP grown by low pressure... Souza, P.L.; Yavich, B.; Pamplona-Pires, M.; Henriques, A. B.; Gonçcalves, L. C. D. // Journal of Applied Physics;8/15/1997, Vol. 82 Issue 4, p1700 

    Investigates the mobility and photoluminescence characteristics of a series of Si delta-doped InP superlattices as a function of the superlattice period. Electronic transport; Broad band emission detected for the periodic structures at energies higher than the InP band gap; Depth profile.

  • CdTe photoluminescence in HgTe-CdTe superlattices. Feldman, Bernard J.; Wroge, M. L.; Leopold, D. J. // Journal of Applied Physics;8/15/1987, Vol. 62 Issue 4, p1516 

    Presents a study which investigated CdTe photoluminescence in HgTe-CdTe superlattices. Details of the experimental techniques used; Explanation for the presence of deep-level lines in the superlattices; Illustration of the liquid-helium photoluminescence spectrum of HgTe-CdTe superlattice.

  • Photoluminescence transitions in semiconductor superlattices. Theoretical calculations for InGaN blue laser device. Kunold, A.; Pereyra, P. // Journal of Applied Physics;5/1/2003, Vol. 93 Issue 9, p5018 

    The optical response of an AlGaN/GaN/(In[sub x]Ga[sub 1-x]N)[sup n]/GaN/AlGaN heterostructure is obtained from precise, and comparatively simple, transition probability calculations. A comprehensive approach to evaluate these quantities from rigorous expressions of the heterostructure's energy...

  • Electric field dependent intersubband optical transitions in a ZnCdSe–ZnSe superlattice. Guan, Z. P.; Kobayashi, T. // Applied Physics Letters;9/30/1996, Vol. 69 Issue 14, p2074 

    The polarization dependence of the excitonic transition in ZnSe-Zn0.8Cd0.2Se superlattices was studied by low-field electroreflection spectroscopy. A new peak observed in the lower energy side of the n=2 heavy-hole exciton E2hh at room temperature is attributed to the forbidden transition in...

  • Effect of growth interruptions on the interfaces of InGaAs/AIAsSb superlattice. Georgiev, Nikolai; Mozume, Teruo // Applied Physics Letters;10/18/1999, Vol. 75 Issue 16, p2371 

    Investigates the effect of growth interruption times combined with selective group-V species exposure of short-period superlattice structure with photoluminescence, x-ray diffraction and reflection high-energy electron diffraction. X-ray diffraction spectrum of a 30-period superlattice growth...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics