TITLE

Calculation of critical layer thickness versus lattice mismatch for GexSi1-x/Si strained-layer heterostructures

AUTHOR(S)
People, R.; Bean, J. C.
PUB. DATE
August 1985
SOURCE
Applied Physics Letters;8/1/1985, Vol. 47 Issue 3, p322
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A calculation of the critical layer thickness h[sub c] for growth of Ge[sub x] Si[sub 1-x] strained layers on Si substrates is presented for 0≤x≤1.0. The present results are obtained assuming misfit dislocation generation is determined solely by energy balance. This approach differs therefore from previous theories (e.g., Matthews et al.), in which the absence of mechanical equilibrium for grown-in threading dislocations determines the onset of the generation of interracial misfit dislocations. It is assumed that interracial misfit dislocations will be generated when the areal strain energy density of the film exceeds the energy density associated with the formation of a screw dislocation at a distance from the free surface equal to the film thickness h. For films thicker than this critical value, screw (and edge) dislocations will be generated at the film/substrate interface. Values obtained for the critical thickness versus lattice mismatch are in excellent agreement with measurements of he for Ge[sub x]Si[sub 1-x] strained layers on Si substrates.
ACCESSION #
9817860

 

Related Articles

  • Band alignments of coherently strained GexSi1-x/Si heterostructures on <001> GeySi1-y substrates. People, R.; Bean, J. C. // Applied Physics Letters;2/24/1986, Vol. 48 Issue 8, p538 

    The self-consistent ab initio pseudopotential results of C. G. Van de Walle and R. M. Martin [J. Vac. Sci. Technol. B 3, 1256 (1985)] have been combined with a phenomenological deformation potential theory to estimate the band gap and band offsets for coherently strained multilayers of...

  • Hole transport through single and double SiGe quantum dots. Cain, Paul A.; Ahmed, Haroon; Williams, David A.; Bonar, Janet M. // Applied Physics Letters;11/20/2000, Vol. 77 Issue 21 

    We report on measurements of hole transport through a double quantum dot structure formed by trench isolation from a SiGe:Si heterostructure. A period change in the Coulomb oscillations is observed upon changing a gate bias, which is attributed to the lowering of one of the tunnel barriers,...

  • Potentialities and basic principles of controlling the plastic relaxation of GeSi/Si and Ge/Si films with stepwise variation in the composition. Bolkhovityanov, Yu.; Gutakovskii, A.; Deryabin, A.; Pchelyakov, O.; Sokolov, L. // Semiconductors;Jan2008, Vol. 42 Issue 1, p1 

    GeSi/Si heterostructures consisting of a plastically relaxed layer that includes various fractions of Ge and which is grown on Si (001) span the values of the lattice parameter from equal to that in silicon to equal to that in germanium. The corresponding substrates are conventionally referred...

  • Single-electron quantum dot in Si/SiGe with integrated charge sensing. Simmons, C. B.; Thalakulam, Madhu; Shaji, Nakul; Klein, Levente J.; Qin, Hua; Blick, R. H.; Savage, D. E.; Lagally, M. G.; Coppersmith, S. N.; Eriksson, M. A. // Applied Physics Letters;11/19/2007, Vol. 91 Issue 21, p213103 

    Single-electron occupation is an essential component to the measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si/SiGe is of interest for semiconductor spin qubits, but single-electron quantum dots have not yet been achieved...

  • Quantum chemical modelling of the structure and properties of hypervalent defects in vitreous SiO[sub 2] and GeO[sub 2]. Zyubin, A. S.; Dembovskiı, S. A. // Physics of the Solid State;Aug99, Vol. 41 Issue 8, p1298 

    A cluster approximation using a semiempirical MNDO-PM3 scheme is used to study the structure and properties of the defect structures which develop in vitreous SiO[sub 2] and GeO[sub 2] during the interaction of the previously discovered most probable defects (two-member cycles, fragments with...

  • Adsorption and decomposition of diethylgermane on Si(111) 7x7. Coon, P.A.; Wise, M.L. // Applied Physics Letters;4/20/1992, Vol. 60 Issue 16, p2002 

    Analyzes the adsorption and decomposition of diethylgermane (DEG) on silicon (Si)(111) 7x7. Techniques to monitor the adsorption and decomposition kinetics; Similarities between diethylsilane and DEG desorption products from Si surfaces; Use of DEG for the epitaxy of germanium atomic layers on...

  • Intersubband infrared absorption in GexSi1-x/Si superlattice by photocurrent measurement. Karunasiri, R. P. G.; Park, J. S.; Wang, K. L.; Cheng, Li-Jen // Applied Physics Letters;4/2/1990, Vol. 56 Issue 14, p1342 

    The intersubband infrared absorption of holes in a GexSi1-x /Si superlattice is observed for the first time. In the experiment, the photocurrent is measured as a function of applied bias which is used to inject holes to the minibands of the superlattice. Two peaks in the photocurrent as a...

  • Wet oxidation of GeSi strained layers by rapid thermal processing. Nayak, D. K.; Kamjoo, K.; Park, J. S.; Woo, J. C. S.; Wang, K. L. // Applied Physics Letters;7/23/1990, Vol. 57 Issue 4, p369 

    A cold-wall rapid thermal processor is used for the wet oxidation of the commensurately grown GexSi1-x layers on Si substrates. The rate of oxidation of the GexSi1-x layer is found to be significantly higher than that of pure Si, and the oxidation rate increases with the increase in the Ge...

  • Ge/Si nanowire mesoscopic Josephson junctions. Xiang, Jie; Vidan, A.; Tinkham, M.; Westervelt, R. M.; Lieber, Charles M. // Nature Nanotechnology;Dec2006, Vol. 1 Issue 3, p208 

    The controlled growth of nanowires (NWs) with dimensions comparable to the Fermi wavelengths of the charge carriers allows fundamental investigations of quantum confinement phenomena. Here, we present studies of proximity-induced superconductivity in undoped Ge/Si core/shell NW heterostructures...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics