Calculation of critical layer thickness versus lattice mismatch for GexSi1-x/Si strained-layer heterostructures

People, R.; Bean, J. C.
August 1985
Applied Physics Letters;8/1/1985, Vol. 47 Issue 3, p322
Academic Journal
A calculation of the critical layer thickness h[sub c] for growth of Ge[sub x] Si[sub 1-x] strained layers on Si substrates is presented for 0≤x≤1.0. The present results are obtained assuming misfit dislocation generation is determined solely by energy balance. This approach differs therefore from previous theories (e.g., Matthews et al.), in which the absence of mechanical equilibrium for grown-in threading dislocations determines the onset of the generation of interracial misfit dislocations. It is assumed that interracial misfit dislocations will be generated when the areal strain energy density of the film exceeds the energy density associated with the formation of a screw dislocation at a distance from the free surface equal to the film thickness h. For films thicker than this critical value, screw (and edge) dislocations will be generated at the film/substrate interface. Values obtained for the critical thickness versus lattice mismatch are in excellent agreement with measurements of he for Ge[sub x]Si[sub 1-x] strained layers on Si substrates.


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