In situ chemical information at the semiconductor/electrolyte interface from infrared vibrational spectroscopy

Tardella, A.; Chazalviel, J.-N.
August 1985
Applied Physics Letters;8/1/1985, Vol. 47 Issue 3, p334
Academic Journal
We have investigated the n-Si/acetonitrile electrolyte interface using attenuated total reflection spectroscopy in the 1.2-5-µm spectral region. Characteristic information from the surface has been extracted by using modulation of the electrode potential and lock-in detection of the optical. signal. When the modulated potential is kept positive with respect to the ftatband potential, vibrational lines can be observed that are characteristic of the Si-H, (Si-)O-H, C-H, and C-N chemical bonds. The shapes and magnitudes of the various lines are qualitatively well understood. Upon electrode aging, the Si-H signal decreases and the (Si-)O-H signal increases, which provides direct in situ evidence for slow oxidation of the silicon surface.


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