Surface morphology of oxidized and ion-etched silicon by scanning tunneling microscopy

Feenstra, R. M.; Oehrlein, G. S.
July 1985
Applied Physics Letters;7/15/1985, Vol. 47 Issue 2, p97
Academic Journal
The surface morphology of silicon (100) wafers has been measured by scanning tunneling microscopy. Samples which were bombarded with low-energy argon ions are found to have an average root-mean-square roughness of 4.0 Â, and the surfaces are covered with characteristic 50Â-diam hillocks. The roughness of nonbombarded (control) samples is observed to be 1.8 Â, and this roughness arises in part from disorder at the interface between a native oxide and the silicon substrate.


Related Articles

  • Fabrication of silicon nanostructures with a scanning tunneling microscope. Snow, E.S.; Campbell, P.M. // Applied Physics Letters;8/9/1993, Vol. 63 Issue 6, p749 

    Presents a method for fabricating silicon nanostructures with a scanning tunneling microscope. Involvement of direct chemical modification of hydrogen-passivated silicon surface; Mechanism of liquid etching for silicon nanostructures; Discussion on the lack of etch degradation in the modified...

  • Maskless patterning of silicon surface based on scanning tunneling microscope tip-induced.... Sugimura, Hiroyuki; Yamamoto, Takuma // Applied Physics Letters;9/19/1994, Vol. 65 Issue 12, p1569 

    Examines the fabrication of silicon micropatterns through scanning tunneling microscopy (STM). Effects of potassium hydroxide solution etching on non-anodized surfaces; Details on the height of etched pattern and thickness of the anodic oxide; Impact of humidity on the area of anodization and...

  • Scanning tunneling microscopy investigations of the Si(111) topography produced by etching in.... Hsiao, Gregor S.; Virtanen, Jorma A.; Penner, Reginald M. // Applied Physics Letters;8/23/1993, Vol. 63 Issue 8, p1119 

    Investigates the time evolution of the topography of an oxidized silicon (Si) surface immersed in an aqueous 40% NH[sub 4]F etching solution. Use of scanning tunneling microscopy; Production of Si pillars at shielded surface locations; Suppression of gas evolution and roughening by reductant...

  • Atomic-scale flattening of SiC surfaces by electroless chemical etching in HF solution with Pt catalyst. Arima, Kenta; Hara, Hideyuki; Murata, Junji; Ishida, Takeshi; Okamoto, Ryota; Yagi, Keita; Sano, Yasuhisa; Mimura, Hidekazu; Yamauchi, Kazuto // Applied Physics Letters;5/14/2007, Vol. 90 Issue 20, p202106 

    The authors present a method for flattening SiC surfaces with Pt as a catalyst in HF solution. The mechanism for flattening SiC surfaces is discussed. The flattened 4H-SiC(0001) surface is composed of alternating wide and narrow terraces with single-bilayer-height steps, which are induced by the...

  • Etching of screw dislocations in YBa[sub 2]Cu[sub 3]O[sub 7] films with a scanning tunneling.... Heyvaert, I.; Osquiguil, E. // Applied Physics Letters;7/6/1992, Vol. 61 Issue 1, p111 

    Analyzes the etching of screw dislocations in YBa[sub 2]Cu[sub 3]O[sub 7] films with a scanning tunneling microscope (STM). Importance of the bias voltage in the etching process; Factors attributing to the etching process; Advantages of using the STM technique.

  • Si/6H–SiC(0001): An unexpected cubic 4×3 Si phase overlayer. Amy, F.; Enriquez, H.; Soukiassian, P.; Brylinski, C.; Mayne, A.; Dujardin, G. // Applied Physics Letters;8/6/2001, Vol. 79 Issue 6 

    We investigate Si deposition on the 6H–SiC(0001) 3×3 surface reconstruction by atom-resolved scanning tunneling microscopy. Upon thermal annealing, the Si thin film forms an unexpected structure having dimer rows in a cubic 4×3 surface array. Such a 4×3 Si phase has a very...

  • Observation of pn junctions on implanted silicon using a scanning tunneling microscope. Hosaka, Sumio; Hosoki, Shigeyuki; Takata, Keiji; Horiuchi, Katsutada; Natsuaki, Nobuyoshi // Applied Physics Letters;8/8/1988, Vol. 53 Issue 6, p487 

    Si pn junctions fabricated by photoresist masked As+ implantation were observed using current imaging tunneling spectroscopy (CITS) in a scanning tunneling microscope (STM). Using the CITS, a specific bias was chosen to define n-type or p-type areas according to whether or not current flowed....

  • Hydrogenated amorphous silicon studied by scanning tunneling microscopy. Wiesendanger, R.; Rosenthaler, L.; Hidber, H. R.; Güntherodt, H.-J.; McKinnon, A. W.; Spear, W. E. // Journal of Applied Physics;5/1/1988, Vol. 63 Issue 9, p4515 

    Presents a study which examined the local electronic properties, topographical and chemical structure of hydrogenated amorphous silicon by using scanning tunneling microscopy under ultrahigh vacuum conditions. Measurement of the local electronic properties of the hydrogenated amorphous silicon;...

  • Direct imaging of a biased p-n junction with conductance mapping. Park, Jeong Young; Williams, E. D.; Phaneuf, R. J. // Journal of Applied Physics;3/15/2002, Vol. 91 Issue 6, p3745 

    We report characterization of Si p-n junction arrays using simultaneous conductance imaging and constant current mode (topographical) scanning tunneling microscopy imaging over a range of reverse bias conditions. Both constant current and conductance imaging of the electrically different regions...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics