TITLE

Surface morphology of oxidized and ion-etched silicon by scanning tunneling microscopy

AUTHOR(S)
Feenstra, R. M.; Oehrlein, G. S.
PUB. DATE
July 1985
SOURCE
Applied Physics Letters;7/15/1985, Vol. 47 Issue 2, p97
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The surface morphology of silicon (100) wafers has been measured by scanning tunneling microscopy. Samples which were bombarded with low-energy argon ions are found to have an average root-mean-square roughness of 4.0 Â, and the surfaces are covered with characteristic 50Â-diam hillocks. The roughness of nonbombarded (control) samples is observed to be 1.8 Â, and this roughness arises in part from disorder at the interface between a native oxide and the silicon substrate.
ACCESSION #
9817846

 

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