Pressure dependence of arsenic diffusivity in silicon

Nygren, Eric; Aziz, Michael J.; Turnbull, David; Poate, John M.; Jacobson, Dale C.; Hull, Robert
July 1985
Applied Physics Letters;7/15/1985, Vol. 47 Issue 2, p105
Academic Journal
The diffusivity of implanted As in crystalline Si has been measured using Rutherford backscattering and channeling for specimens annealed at temperatures between 850 and 1000 °C under hydrostatic pressures up to 30 kbar. The diffusivity, at a given temperature, was found to increase with pressure with a maximum increase of a factor of 10. This diffusivity enhancement can be described by an average activation volume of -5.7 ± 0.8 cm³/mole. The activation enthalpy ranges from an ambient value of 4.5 to 3.6 eV at 30 kbar.


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