TITLE

Pressure dependence of arsenic diffusivity in silicon

AUTHOR(S)
Nygren, Eric; Aziz, Michael J.; Turnbull, David; Poate, John M.; Jacobson, Dale C.; Hull, Robert
PUB. DATE
July 1985
SOURCE
Applied Physics Letters;7/15/1985, Vol. 47 Issue 2, p105
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The diffusivity of implanted As in crystalline Si has been measured using Rutherford backscattering and channeling for specimens annealed at temperatures between 850 and 1000 °C under hydrostatic pressures up to 30 kbar. The diffusivity, at a given temperature, was found to increase with pressure with a maximum increase of a factor of 10. This diffusivity enhancement can be described by an average activation volume of -5.7 ± 0.8 cm³/mole. The activation enthalpy ranges from an ambient value of 4.5 to 3.6 eV at 30 kbar.
ACCESSION #
9817840

 

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