TITLE

Preferential nucleation along SiO2 steps in amorphous Si

AUTHOR(S)
Moniwa, M.; Miyao, M.; Tsuchiyama, R.; Ishizaka, A.; Ichikawa, M.; Sunami, H.; Tokuyama, T.
PUB. DATE
July 1985
SOURCE
Applied Physics Letters;7/15/1985, Vol. 47 Issue 2, p113
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Annealing characteristics for amorphous Si film deposited on an SiO[sub 2] layer were investigated with the hope that this would throw further light on aspects of solid phase epitaxy. Preferential nucleation, which initiated from the bottom region of deposited Si film, was found along SiO[sub 2] steps. The activation energy for the growth speed of the nuclei was evaluated to be 1.7 eV. As this value is significantly smaller than 2.0 eV, the bond breaking energy of Si, stress originating mainly from the thermal expansion difference between SiO[sub 2] and Si, is considered to be the driving force.
ACCESSION #
9817835

 

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