Preferential nucleation along SiO2 steps in amorphous Si

Moniwa, M.; Miyao, M.; Tsuchiyama, R.; Ishizaka, A.; Ichikawa, M.; Sunami, H.; Tokuyama, T.
July 1985
Applied Physics Letters;7/15/1985, Vol. 47 Issue 2, p113
Academic Journal
Annealing characteristics for amorphous Si film deposited on an SiO[sub 2] layer were investigated with the hope that this would throw further light on aspects of solid phase epitaxy. Preferential nucleation, which initiated from the bottom region of deposited Si film, was found along SiO[sub 2] steps. The activation energy for the growth speed of the nuclei was evaluated to be 1.7 eV. As this value is significantly smaller than 2.0 eV, the bond breaking energy of Si, stress originating mainly from the thermal expansion difference between SiO[sub 2] and Si, is considered to be the driving force.


Related Articles

  • An Atomistic Model of Stressed Si Solid-Phase Epitaxy. Rudawski, N. G.; Jones, K. S.; Gwilliam, R. // AIP Conference Proceedings;11/3/2008, Vol. 1066 Issue 1, p205 

    An atomistic model of stressed solid-phase epitaxial growth of ion-implanted Si is presented. Macroscopic growth kinetics are modeled as the result of crystal island nucleation and subsequent island ledge migration in the growth interface between amorphous and crystalline phases with a...

  • Surface nucleation of Ti silicides at elevated temperatures. Tung, R.T. // Applied Physics Letters;4/1/1996, Vol. 68 Issue 14, p1933 

    Examines the surface nucleation of titanium (Ti) silicides at the surface of silicon (Si). Deposition of Ti at elevated temperatures on amorphous Si; Effects of temperature on the phases of the silicide layer; Growth of TiSi[sub 2] layers with the deposition of Ti.

  • X-ray Spectroscopic Study of Electronic Structure of Amorphous Silicon and Silicyne. Mashin, A. I.; Khokhlov, A. F.; Domashevskaya, É. P.; Terekhov, V. A.; Mashin, N. I. // Semiconductors;Aug2001, Vol. 35 Issue 8, p956 

    X-ray and ultrasoft X-ray spectroscopy have both been applied to study SiK[sub β] and SiL[sub 23] emission spectra of crystalline silicon (c-Si), amorphous hydrogenated silicon (a-Si:H), and silicyne (a new allotropic linear-chain form of silicon). SiL[sub 23] spectra of silicyne show three...

  • Structure and formation mechanism of the E[sub α][sup ′] center in amorphous SiO[sub 2]. Uchino, T.; Takahashi, M.; Yoko, T. // Applied Physics Letters;4/30/2001, Vol. 78 Issue 18, p2730 

    We provide a possible formation mechanism for one of the Si-related paramagnetic centers in amorphous silica, E[sub α][sup ′], which is stable only below 200 K, on the basis of the quantum-chemical calculations. We show that the divalent Si defect can trap a hole, resulting in two...

  • Resonance vibration of amorphous SiO[sub 2] nanowires driven by mechanical or electrical field excitation. Dikin, D. A.; Chen, X.; Ding, W.; Wagner, G.; Ruoff, R. S. // Journal of Applied Physics;1/1/2003, Vol. 93 Issue 1, p226 

    In this work, we have used the mechanical resonance method to determine the bending modulus of amorphous SiO[sub 2] nanowires and to study an electron charge trapping effect that occurs in these nanowires. For uniform amorphous nanowires having diameter ∼100 nm and length over 10 µm, the...

  • Determination of the energy-dependent conduction band mass in SiO[sub 2]. Ludeke, R.; Cartier, E.; Schenk, Andreas // Applied Physics Letters;9/6/1999, Vol. 75 Issue 10, p1407 

    Studies the energy dependence of the conduction band mass in amorphous SiO[sub 2]. Quantum interference oscillations in the ballistic electron emission microscope current; Monte Carlo simulations of the electron mean free paths obtained by internal photoemission.

  • Defects in a-SiO2 deposited from a tetraethoxysilane-oxygen plasma. Devine, R. A. B.; Tissier, A. // Journal of Applied Physics;2/15/1991, Vol. 69 Issue 4, p2480 

    Presents a study that examined intrinsic and extrinsic paramagnetic defects in as-deposited and annealed samples of amorphous silicon dioxide produced by plasma enhanced chemical vapor deposition. Use of tetraethoxysilane and oxygen[sub2]; Total paramagnetic defect density of the as-deposited...

  • Channeling dependence of ion-beam-induced epitaxial recrystallization in silicon. Linnros, J.; Holmén, G. // Journal of Applied Physics;3/1/1986, Vol. 59 Issue 5, p1513 

    Presents a study which examined the regrowth of the amorphous layers in silicon with the Rutherford backscattering channeling technique. Experimental procedure; Results; Conclusion.

  • Solid phase epitaxy of implantation-induced amorphous layer in (11¯00)- and (112¯0)-oriented 6H-SiC. Satoh, Masataka; Nakaike, Yuuki; Nakamura, Tomonori // Journal of Applied Physics;2/1/2001, Vol. 89 Issue 3, p1986 

    The epitaxial regrowth of the implantation-induced amorphous layer in (1&1macr;00)- and (11&2macr;0)-oriented 6H-SiC has been investigated at annealing temperatures below 800°C using Rutherford backscattering spectrometry and transmission electron microscopy. The surface region of sample is...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics