TITLE

Superficial image emphasis lithography

AUTHOR(S)
Matsuda, Tadahito; Ishii, Tetsuyoshi; Harada, Katsuhiro
PUB. DATE
July 1985
SOURCE
Applied Physics Letters;7/15/1985, Vol. 47 Issue 2, p123
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A new approach to electron beam lithography for device fabrications is described. This technique transfers relief images formed at the superficial layer of a positive resist inversely to the bottom layer of the resist. The technique can drastically improve the resolution and linewidth accuracy of delineated patterns by reducing proximity effects and the influence of incident beam spread. Writing time can also be reduced. 0.2-µm very large scale integration patterns and feature with 250-Â linewidth less than the incident beam size have been successfully produced.
ACCESSION #
9817830

 

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