Epitaxial growth of FeSi2 in Fe thin films on Si with a thin interposing Ni layer

Cheng, H. C.; Yew, T. R.; Chen, L. J.
July 1985
Applied Physics Letters;7/15/1985, Vol. 47 Issue 2, p128
Academic Journal
Thin interposing Ni layers between Fe thin films and substrate Si have been shown to be very effective in inducing the growth and improving the quality of epitaxial FeSi[sub 2] on silicon. The formation of a transition layer with graded concentration is conceived to facilitate the epitaxial growth of FeSi[sub 2] on silicon. The thin interposing layer scheme may be extended to promote the epitaxial growth of a number of refractory silicides on silicon.


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