Implantation disordering of AlxGa1-xAs superlattices

Gavrilovic, P.; Deppe, D. G.; Meehan, K.; Holonyak, N.; Coleman, J. J.; Burnham, R. D.
July 1985
Applied Physics Letters;7/15/1985, Vol. 47 Issue 2, p130
Academic Journal
Data are presented showing that layer disordering of Al[sub x] Gap[sub 1-x] As-GaAs quantum well heterostructures (QWH's) or superlattices (SL's) via ion implantation can be effected with a lattice constituent (Al), an inert ion (Kr), or an active impurity (Zn, Si, S, etc.). A doping impurity that diffuses (during annealing) via multiple sites, making column III sites available for Al-Ga interchange, is most effective in layer disordering. However, any implanted ion is itself relatively effective in converting an Al[sub x]Ga[sub 1-x]As-GaAs QWH or SL to bulk-crystal Al[sub y] Ga[sub 1-y] As (0 ≤ y ≤ x) via damage-induced disordering.


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