TITLE

Chemical vapor deposition of boron-doped hydrogenated amorphous silicon

AUTHOR(S)
Ellis, F. B.; Delahoy, A. E.
PUB. DATE
July 1985
SOURCE
Applied Physics Letters;7/15/1985, Vol. 47 Issue 2, p135
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Deposition conditions and film properties for a variety of boron-doped hydrogenated amorphous silicon films and silicon-carbon films produced by chemical vapor deposition (CVD) are discussed. Deposition gases include monosilane, disilane, trisilane, and acetylene. Two types of optically wide band-gap p layers are obtained. One of these window p layers (without carbon) has been extensively tested in photovoltaic devices. Remarkably, this p layer can be deposited between about 200 to 300 °C. A typical open circuit voltage in an all CVD p-i-n device is 0.70-0.72 V, and in a hybrid device where the i and n layers are deposited by glow discharge, 0.8-0.83 V.
ACCESSION #
9817823

 

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