Ion beam and temperature annealing during high dose implants

Cannavò, S.; Grimaldi, M. G.; Rimini, E.; Ferla, G.; Gandolfi, L.
July 1985
Applied Physics Letters;7/15/1985, Vol. 47 Issue 2, p138
Academic Journal
The regrowth of a Si amorphous layer under a masked region during an implant of 120 keV7.5 × 10[sup 15] P[sup +]/cm² at an average dose rate of 9.0 µA/cm² has been measured by the channeling technique. The amorphous layer reorders epitaxially over ∼20 nm after the implant, in agreement with calculations based on the temperature dose rise and regrowth velocity. A single implant of 7.5 × 10[sup 15] P[sup +]/cm² produces a nearly damage-free region implying a regrowth rate enhanced by the large amount of mobile point defects generated in the collision cascade of the impinging ions.


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