Acoustic phonon generation in the picosecond dynamics of dense electron-hole plasmas in InGaAsP films

Wiesenfeld, Jay M.
July 1985
Applied Physics Letters;7/15/1985, Vol. 47 Issue 2, p143
Academic Journal
Oscillations superposed on transient transmission and reflection from submicron films of InGaAsP (E[sub g] = 0.96 eV) and GaAs excited by subpicosecond optical pulses have been observed. The oscillations are due to coherent acoustic phonon generation in the thin films. Values for the velocity of sound, and the band-gap variation due to hydrostatic pressure and the difference in acoustic deformation potentials between conduction and valence bands are determined by analyzing the period and magnitude of the oscillations.


Related Articles

  • Free-electronlike diffusive thermopower of indium tin oxide thin films. Chih-Yuan Wu; Tra Vu Thanh; Yi-Fu Chen; Jui-Kan Lee; Juhn-Jong Lin // Journal of Applied Physics;Dec2010, Vol. 108 Issue 12, p123708 

    We report our measurements of thermopower, S(T), on a series of indium tin oxide thin films from 300 down to 5 K to extract the carrier concentration n. The temperature behavior of S(T) below 300 K can be essentially described by a prevailing linear diffusive contribution. In this wide...

  • Dependence of InAs phonon energy on misfit-induced strain. Yang, M.J.; Wagner, R.J. // Applied Physics Letters;12/20/1993, Vol. 63 Issue 25, p3434 

    Examines the transverse-optical (TO) phonon energy in strained indium arsenide quantum wells. Demonstration of far-infrared absorption by TO phonons; Correlation between TO phonon energy and misfit-induced biaxial tension; Determination of the phonon deformation parameters.

  • Ultrafast carrier thermalization in InN. Wen, Yu-Chieh; Chen, Cheng-Ying; Shen, Chang-Hong; Gwo, Shangjr; Sun, Chi-Kuang // Applied Physics Letters;12/4/2006, Vol. 89 Issue 23, p232114 

    Carrier thermalization dynamics in heavily doped n-type InN was investigated at room temperature with a femtosecond transient transmission measurement. The dependence of hot carrier cooling time on the total electron density indicates that the plasma screening of electron-LO phonon interactions...

  • Surface structure, composition, and polarity of indium nitride grown by high-pressure chemical vapor deposition. Bhatta, R. P; Thoms, B. D; Alevli, M.; Woods, V.; Dietz, N. // Applied Physics Letters;3/20/2006, Vol. 88 Issue 12, p122112 

    The structure and surface bonding configuration of InN layers grown by high-pressure chemical vapor deposition have been studied. Atomic hydrogen cleaning produced a contamination free surface. Low-energy electron diffraction yielded a 1×1 hexagonal pattern demonstrating a well-ordered...

  • Spin Transport And Spin Relaxation In Ge/Si Quantum Dots. Zinovieva, A. F.; Nenashev, A. V.; Dvurechenskii, A. V. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p1393 

    The spin relaxation for localized hole state in single Ge quantum dot and for hole tunneling between two coupled quantum dots were investigated theoretically. The time of spin relaxation due to acoustic phonon coupling (direct one-phonon processes) is τ ∼ 10-5s at temperature T=4K. A...

  • Lattice dynamics of crystalline In[sub 4]Se[sub 3]. Bercha, D. M.; Rushchanskiı, K. Z. // Physics of the Solid State;Nov98, Vol. 40 Issue 11, p1906 

    Calculations of the phonon spectrum of crystalline In[sub 4]Se[sub 3] in a model of central-pair interactions with neglect of the long-range forces are presented. The model developed contains five unknown parameters, which are determined from experimental values of the elastic moduli without...

  • Ultrafast carrier dynamics in InxGa1-xN (0001) epilayers: Effects of high fluence excitation. Lioudakis, Emmanouil; Othonos, Andreas; Dimakis, Emmanouil; Iliopoulos, Eleftherios; Georgakilas, Alexandros // Applied Physics Letters;3/20/2006, Vol. 88 Issue 12, p121128 

    Ultrafast carrier dynamics in InxGa1-xN (0001) epilayers were investigated, using femtosecond transient differential transmission and reflection measurements for x=0.07, 0.15, and 0.33, over a fluence range of 1–12 mJ/cm2. Stimulated emission as well as band gap renormalization play a...

  • Room-temperature electron spin relaxation in bulk InAs. Boggess, Thomas F.; Olesberg, J. T.; Yu, C.; Flatté, Michael E.; Lau, Wayne H. // Applied Physics Letters;8/28/2000, Vol. 77 Issue 9 

    Polarization-resolved, subpicosecond pump-probe measurements at a wavelength of 3.43 μm are used to determine the electron spin relaxation time T[sub 1] in bulk InAs at room temperature. The measured T[sub 1] of 19±4 ps is in excellent agreement with the theoretical value of 21 ps, which...

  • Defect structure in III-V compound semiconductors: Generation and evolution of defect structures in InGaAs and InGaAsP epitaxial layer grown by hydride transport vapor-phase epitaxy. Chu, S. N. G.; Nakahara, S.; Karlicek, R. F.; Strege, K. E.; Mitcham, D.; Johnston, W. D. // Journal of Applied Physics;5/15/1986, Vol. 59 Issue 10, p3441 

    Focuses on the generation and evolution of a novel defect structure in indium (In) -gallium (Ga) -arsenic (As) single-layer and InGaAs-phosphorus (P)/InP multilayer laser structures grown by hydride transport vapor-phase epitaxy (VPE) using cross-section and plan-view transmission electron...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics